X-ray induced persistent photoconductivity in Si-doped Al0.35_{0.35}Ga0.65_{0.65}As

We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {\it DX} centers. The excitation mechanism of the {\it DX} centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident X-ray energy exhibits an edge both at the Ga and As K-edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of {\it DX} centers. A high quantum yield ($\gg 1$) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.Comment: 3 pages of text, 6 figures. An error in Fig.5 was detected, so we corrected i

Hysteresis of Backflow Imprinted in Collimated Jets

We report two different types of backflow from jets by performing 2D special relativistic hydrodynamical simulations. One is anti-parallel and quasi-straight to the main jet (quasi-straight backflow), and the other is bent path of the backflow (bent backflow). We find that the former appears when the head advance speed is comparable to or higher than the local sound speed at the hotspot while the latter appears when the head advance speed is slower than the sound speed bat the hotspot. Bent backflow collides with the unshocked jet and laterally squeezes the jet. At the same time, a pair of new oblique shocks are formed at the tip of the jet and new bent fast backflows are generated via these oblique shocks. The hysteresis of backflow collisions is thus imprinted in the jet as a node and anti-node structure. This process also promotes broadening of the jet cross sectional area and it also causes a decrease in the head advance velocity. This hydrodynamic process may be tested by observations of compact young jets.Comment: 9 pages, 5 figures, accepted for publication in ApJ

A Comparison of the High-Frequency Magnetic Fluctuations in Insulating and Superconducting La2-xSrxCuO4

Inelastic neutron scattering performed at a spallation source is used to make absolute measurements of the dynamic susceptibility of insulating La2CuO4 and superconducting La2-xSrxCuO4 over the energy range 15<EN<350 meV. The effect of Sr doping on the magnetic excitations is to cause a large broadening in wavevector and a substantial change in the spectrum of the local spin fluctuations. Comparison of the two compositions reveals a new energy scale of 22 meV in La1.86Sr0.14CuO4.Comment: RevTex, 7 Pages, 4 postscript figure

String Picture of a Frustrated Quantum Magnet and Dimer Model

We map a geometrically frustrated Ising system with transversal field generated quantum dynamics to a strongly anisotropic lattice of non-crossing elastic strings. The combined effect of frustration, quantum and thermal spin fluctuations is explained in terms of a competition between intrinsic lattice pinning of strings and topological defects in the lattice. From this picture we obtain analytic results for correlations and the phase diagram which agree nicely with recent simulations.Comment: 4 pages, 2 figure

Scaling of magnetic fluctuations near a quantum phase transition

We use inelastic neutron scattering to measure the magnetic fluctuations in a single crystal of the heavy fermion alloy CeCu_5.9Au_0.1 close to the antiferromagnetic quantum critical point. The energy and temperature-dependent spectra obey (E/T) scaling at Q near (1,0,0). The neutron data and earlier bulk susceptibility are consistent with the form 1/X ~ f(Q)+(-iE+bT)^a, with an anomalous exponent a=0.8. We confirm the earlier observation of quasi-low dimensionality and show how both the magnetic fluctuations and the thermodynamics can be understood in terms of a quantum Lifshitz point.Comment: Latex file with two postscript figure

CeRu4_4Sn6_6: heavy fermions emerging from a Kondo-insulating state

The combination of low-temperature specific-heat and nuclear-magnetic-resonance (NMR) measurements reveals important information of the ground-state properties of CeRu$_4$Sn$_6$, which has been proposed as a rare example of a tetragonal Kondo-insulator (KI). The NMR spin-latticerelaxation rate $1/T_1$ deviates from the Korringa law below 100 K signaling the onset of an energy gap $\Delta E_g1/k_B \simeq 30$K. This gap is stable against magnetic fields up to 10 T. Below 10 K, however, unusual low-energy excitations of in-gap states are observed, which depend strongly on the field H. The specific heat C detects these excitations in the form of an enhanced Sommerfeld coefficient $\gamma = C(T)/T$ : In zero field, $\gamma$ increases steeply below 5 K, reaching a maximum at 0.1 K, and then saturates at $\gamma = 0.6$ J/molK$^2$. This maximum is shifted to higher temperatures with increasing field suggesting a residual density of states at the Fermi level developing a spin gap $\Delta E_g2$. A simple model, based on two narrow quasiparticle bands located at the Fermi level - which cross the Fermi level in zero field at 0.022 states/meV f.u. - can account qualitatively as well as quantitatively for the measured observables. In particular, it is demonstrated that fitting our data of both specific heat and NMR to the model, incorporating a Ce magnetic moment of $\mu = \Delta E_g1/\mu_{0H} \simeq 1 \mu_B$, leads to the prediction of the field dependence of the gap. Our measurements rule out the presence of a quantum critical point as the origin for the enhanced $\gamma$ in CeRu$_4$Sn$_6$ and suggest that this arises rather from correlated, residual in-gap states at the Fermi level. This work provides a fundamental route for future investigations into the phenomenon of narrow-gap formation in the strongly correlated class of systemComment: 11 pages, 13 figure

Microscopic and Macroscopic Signatures of Antiferromagnetic Domain Walls

Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electron transport. A single antiferromagnetic domain wall interface resistance is deduced to be of order $5\times10^{-5}\mathrm{\mu\Omega\cdot cm^{2}}$ at a temperature of 100 K.Comment: 3 color figure