Polarization properties of polymer-based photonic crystal fibers

Selectively filled photonic crystal fibers with polydimethylsiloxane (PDMS), a silicon-type material, have been studied. Is has been demonstrated that polarization properties of these hybrid devices and the properties of the guided light in relation with the temperature changes, finding that the state of polarization (SOP) change with the increasing temperature but remains constant for a wide spectrum of wavelengths for a determinate temperature

Dynamical scaling of the quantum Hall plateau transition

Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2.Comment: v2: Length shortened to fulfil Journal criteri

Temperature driven spin-zero effect in TaAs2_2

The electrical and thermo-electrical transport effects of the TaAs$_2$ semimetal were measured in a magnetic field applied along [-2 0 1] direction. The resulting field dependences of the resistivity as well as the Hall, Seebeck and Nernst coefficient below T ~ 100 K can be satisfactory described within the two-band model consisting of the electron and hole pockets. At low temperature all the measured effects exhibit significant contribution from quantum oscillations. The fast Fourier transform (FFT) of the oscillatory Nernst signal shows two fundamental frequencies, Fa = 105 T and Fb = 221 T, and the second harmonic of the latter (F2b = 442 T). The ratio between FFT amplitudes of Fb and F2b changes with temperature in an unusual way, indicating that we observe the spin-zero effect caused by temperature change. This is likely related to substantial temperature dependence of the Lande g-factor, which in turn can result from non-parabolic energy dispersion or temperature evolution of the spin-orbit coupling.Comment: 30 pages, 14 figure

Conductance spectra of (Nb, Pb, In)/NbP -- superconductor/Weyl semimetal junctions

The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmission, the (001) surface of the crystal was covered by several hundred nm thick metallic layers of either Pb, or Nb, or In. DC current-voltage characteristics and AC differential conductance through the interfaces as a function of the DC bias were investigated. When the metals become superconducting, all three types of junctions show conductance increase, pointing out the Andreev reflection as a prevalent contribution to the subgap conductance. In the case of Pb-NbP and Nb-NbP junctions, the effect is satisfactorily described by modified Blonder-Tinkham-Klapwijk model. The absolute value of the conductance is much smaller than that for the bulk crystal, indicating that the transmission occurs through only a small part of the contact area. An opposite situation occurs in In-NbP junction, where the conductance at the peak reaches the bulk value indicating that almost whole contact area is transmitting and, additionally, a superconducting proximity phase is formed in the material. We interpret this as a result of indium diffusion into NbP, where the metal atoms penetrate the surface barrier and form very transparent superconductor-Weyl semimetal contact inside. However, further diffusion occurring already at room temperature leads to degradation of the effect, so it is observed only in the pristine structures. Despite of this, our observation directly demonstrates possibility of inducing superconductivity in a type-I Weyl semimetal.Comment: Accepted for Phys. Rev. B. 13 pages, 12 figures. Second version with major revisions. The title was changed. One author R. Jakiela added. New inset to Fig. 8(A). New fits in Fig. 8 (B) and Fig. 10 (B). Added figures 12 (C)-(E). Added Fig. 12 (F) with SIMS data. Rewritten chapters III-C-2 and III-C-3. Reference no. 38 removed, 11 new references: 9, 21, 22, 40-44, 46-49 were adde

Structure Dependent Conductivity of Ultrathin ZnO Films

Zinc oxide lms dedicated for hybrid organic/inorganic devices have been studied. The lms were grown at low temperature (100 • C, 130 • C and 200 • C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the lms from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO lms was determined