Semiconductor devices and methods

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.Board of Regents, University of Texas Syste

Semiconductor devices and methods

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.Board of Regents, University of Texas Syste

Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications Annual Report

We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development

Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized

High performance AlGaN heterostructure field-effect transistors

Issued as final reportKyma Technologies, Inc

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications

Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy

Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Lett

Structural neuroimaging correlates of social deficits are similar in autism spectrum disorder and attention-deficit/hyperactivity disorder: analysis from the POND Network

Autism spectrum disorder (ASD), attention-deficit/hyperactivity disorder (ADHD), and obsessive-compulsive disorder (OCD) have been associated with difficulties recognizing and responding to social cues. Neuroimaging studies have begun to map the social brain; however, the specific neural substrates contributing to social deficits in neurodevelopmental disorders remain unclear. Three hundred and twelve children underwent structural magnetic resonance imaging of the brain (controls = 32, OCD = 44, ADHD = 77, ASD = 159; mean age = 11). Their social deficits were quantified on the Social Communication Questionnaire (SCQ) and the Reading the Mind in the Eyes Test (RMET). Multivariable regression models were used to examine the structural neuroimaging correlates of social deficits, with both a region of interest and a whole-brain vertex-wise approach. For the region of interest analysis, social brain regions were grouped into three networks: (1) lateral mentalization (e.g., temporal–parietal junction), (2) frontal cognitive (e.g., orbitofrontal cortex), and (3) subcortical affective (e.g., limbic system) regions. Overall, social communication deficits on the SCQ were associated with thinner cortices in the left lateral regions and the right insula, and decreased volume in the ventral striatum, across diagnostic groups (p = 0.006 to \u3c0.0001). Smaller subcortical volumes were associated with more severe social deficits on the SCQ in ASD and ADHD, and less severe deficits in OCD. On the RMET, larger amygdala/hippocampal volumes were associated with fewer deficits across groups. Overall, patterns of associations were similar in ASD and ADHD, supporting a common underlying biology and the blurring of the diagnostic boundaries between these disorders

Oxytocin Receptor Polymorphisms are Differentially Associated with Social Abilities across Neurodevelopmental Disorders

Oxytocin is a pituitary neuropeptide that affects social behaviour. Single nucleotide polymorphisms (SNPs) in the oxytocin receptor gene (OXTR) have been shown to explain some variability in social abilities in control populations. Whether these variants similarly contribute to the severity of social deficits experienced by children with neurodevelopmental disorders is unclear. Social abilities were assessed in a group of children with autism spectrum disorder (ASD, n = 341) or attention deficit hyperactivity disorder (ADHD, n = 276) using two established social measures. Scores were compared by OXTR genotype (rs53576, rs237887, rs13316193, rs2254298). Unexpectedly, the two most frequently studied OXTR SNPs in the general population (rs53576 and rs2254298) were associated with an increased severity of social deficits in ASD (p \u3c 0.0001 and p = 0.0005), yet fewer social deficits in ADHD (p = 0.007 and p \u3c 0.0001). We conclude that these genetic modifier alleles are not inherently risk-conferring with respect to their impact on social abilities; molecular investigations are greatly needed