Local anodic oxidation of graphene layers on SiC

This work is supported by Presidential Grant МК-5852.2018.2

Current and piezoresponse measurements of repolarized regions of thin PbZr54Ti46O3 films

This work was supported by the RFBR grant N 18-32-00092_mol-a

Polarization switching effects in thin BZT films

This work was supported by the RFBR grant N 18-32-00092_mol-a

Study of surface potential in location of p-n junction on the chip of the GaAs heterostructures using atomic-force microscopy

Недавно был обнаружен эффект увеличения пробойного напряжения GaAs/AlGaAs диодов с непассивированной поверхностью вследствие многократного циклического увеличения обратного напряжения, сопровождавшегося незначительными токами утечки. В данной работе методами атомно-силовой микроскопии путѐм сопоставления изменений в топографии поверхности и в распределении электрического потенциала на поверхности скола изучен эффект увеличения пробойного напряжения GaAs/AlGaAs диодов при возникновении поверхностных токов утечки.Recently it has found the process of increasing the breakdown voltage of GaAs/AlGaAs unpassivated diodes after cyclic increasing of bias voltage. This work shows the comparison of topography changes, electric potential distribution and surface leakage current on the chip of the GaAs/AlGaAs heterostructers, which explain the increasing of breakdown voltage. The researching was carried out by using atomic-force microscopy

Scanning probe method for mapping the intensity and emission spectrum of semiconductor laser structures

В работе предложен зондовый метод, позволяющий визуализировать области выхода излучения из поверхности сколотых полупроводниковых лазеров с субволновым разрешением. Метод основан на детектировании в вакуумных условиях сдвига резонансной частоты зонда, связанной с нагревом балки либо кончика зонда излучением.Scanning probe method is proposed that allows to visualize regions of light emission on the cleavage surface of semiconductor lasers with a subwavelength resolution. The method is based on detecting under vacuum conditions of a shift in the resonant frequency of the probe related with the cantilever or probe tip heating by laser radiation

Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires

In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described

Chapter Opportunities of Scanning Probe Microscopy for Electrical, Mechanical and Electromechanical Research of Semiconductor Nanowires

In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can be investigated in individual III–V semiconductor nanowires with scanning probe microscope are presented. Transport measurements in GaAs nanowires based on stable electric connection provided opportunity to study individual vertical freestanding nanowires under gentle precisely controlled force. Latter approach appears superior to studies of horizontally fixed nanowires because studying vertical as‐grown nanowires avoids charge leakage into the substrate and impact of defects caused by breakage of nanowires. Principles of thermionic emission theory are used to characterize electrical effects in individual as-grown nanowires. Effects of SiO2 protective layer, surface passivation layers, illumination, and influence of sweeping rate of current‐voltage recording are analyzed. Elastic studies are performed for individual InP nanowires affixed at one end. Bending of the tapered nanowires with diameters of a narrow free end either 10 or 20 nm was performed under different loading forces. It allowed calculation of flexibility coefficient profiles along the nanowires’ axes. Improved numerical model for tapered nanowires leads to the finding of Young’s modulus of wurtzite InP material in nanowires. Piezoelectric measurements permitting registration of reverse piezo effect with opportunities of direct piezo response recording for individual wurtzite GaAs nanowires are briefly described