Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells

AbstractIn this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance decay measurements on test wafers with various contact geometries and compare two different aluminum pastes. The aluminum paste which is optimized for local contacts shows a deep and uniform local back surface field that results in Smet=600cm/s on 1.5Ωcm p-type silicon. In contrast, a standard Al paste for full-area metallization shows a non-uniform back surface field and a Smet of 2000cm/s on the same material. We achieve an area-averaged rear surface recombination velocity Srear=(65±20) cm/s for line contacts with a pitch of 2mm. The application of the optimized paste to screen-printed solar cells with dielectric surface passivation results in efficiencies of up to 19.2% with a Voc=655mV and a Jsc=38.4mA/cm2 on 125×125 mm2 p-type Cz silicon wafers. The internal quantum efficiency analysis reveals Srear=(70±30) cm/s which is in agreement with our lifetime results. Applying fine line screen-printing, efficiencies up to 19.4% are demonstrated

Optimized stencil print for low Ag paste consumption and high conversion efficiencies

We evaluate industrial-type PERC solar cells applying a dual printed front grid with stencil printed Ag fingers. We vary the Ag paste consumption for the finger print between 8.4 mg and 120.4 mg per 156 x 156 mm(2) wafer (weighted after printing before drying) by using polyurethane squeegees with different shore hardness as well as a metal squeegee and by varying the printing pressure to obtain different finger heights. The busbar consumes additional 19.5 mg Ag paste. We obtain average finger heights from 5.9 mu m up to 24.3 mu m for 55 mu m to 65 mu m wide fingers. The resulting PERC solar cells show an average efficiency of 20.2% for finger paste consumptions above 60 mg. In contrast, a strong reduction of the conversion efficiency with less than 60 mg finger paste consumption is observed since the increased series resistance reduces the FF. By analytical modelling, we compare the calculated series resistance to the experimental data and observe a good accordance for more than 40 mg finger paste consumption whereas the experimental series resistance slightly exceed the modelled values below 40 mg. In addition, we use numerical simulations to investigate the series resistance dependence on the finger height which shows higher experimental values for finger height below 10 mu m. The deviation of the measured series resistance and the two modelled cases is mostly due to inhomogeneous distribution of finger height profiles and finger interruptions on the solar cells with front finger paste consumption of less than 40 mg. For finger paste consumption below 60 mg, we find that also the specific contact resistance increases. A physical model of the root cause for this dependence still has to be found

Advances in the Surface Passivation of Silicon Solar Cells

AbstractThe surface passivation properties of aluminium oxide (Al2O3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiNx). It is shown that Al2O3 has fundamental advantages over SiNx when applied to the rear of p-type silicon solar cells as well as to the p+ emitter of n-type silicon solar cells. Special emphasis is paid to the transfer of Al2O3 into industrial solar cell production. We compare different Al2O3 deposition techniques suitable for mass production such as ultrafast spatial atomic layer deposition, inline plasma-enhanced chemical vapour deposition and reactive sputtering. Finally, we review the most recent cell results with Al2O3 passivation and give a brief outlook on the future prospects of Al2O3 in silicon solar cell production

Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells

The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term perspective, PECVD aluminium oxide (AlOx) films might be better suited for the implementation into industrial-type solar cells than ALD-Al 2O3 films. In this paper, we report results achieved with a newly developed PECVD deposition process for AlOx using an inductively coupled plasma (ICP). We compare the results to high-quality ALDAl2O3 films. We examine a stack consisting of a thin AlOx passivation layer and a PECVD silicon nitride (SiNy) capping layer. Surface recombination velocities below 9 cm/s were measured on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated either by ICP-PECVD-AlOx films or by ALD-Al2O3 films after annealing at 425°C. Both passivation schemes provide an excellent thermal stability during firing at 910°C with SRVs below 12 cm/s for both, Al2O3/SiNy stacks and single Al 2O3 layers. A fixed negative charge of -4×10 12 cm-2 is measured for ICP-AlOx and ALD-Al2O3, whereas the interface state density is higher for the ICP-AlOx layer with values of 11.0×1011 eV-1cm-2 compared to 1.3×1011 eV -1cm-2 for ALD-Al2O3. Implemented into large-area screen-printed PERC solar cells, an independently confirmed efficiency of 20.1% for ICP-AlOx and an efficiency of 19.6% for ALD-Al2O3 are achieved.BMU/0325296Solland Solar Cells BVSolarWorld Innovations GmbHSCHOTT Solar AGRENA GmbHSINGULUS TECHNOLOGIES A

The ELBA Force Field for Coarse-Grain Modeling of Lipid Membranes

A new coarse-grain model for molecular dynamics simulation of lipid membranes is presented. Following a simple and conventional approach, lipid molecules are modeled by spherical sites, each representing a group of several atoms. In contrast to common coarse-grain methods, two original (interdependent) features are here adopted. First, the main electrostatics are modeled explicitly by charges and dipoles, which interact realistically through a relative dielectric constant of unity (). Second, water molecules are represented individually through a new parametrization of the simple Stockmayer potential for polar fluids; each water molecule is therefore described by a single spherical site embedded with a point dipole. The force field is shown to accurately reproduce the main physical properties of single-species phospholipid bilayers comprising dioleoylphosphatidylcholine (DOPC) and dioleoylphosphatidylethanolamine (DOPE) in the liquid crystal phase, as well as distearoylphosphatidylcholine (DSPC) in the liquid crystal and gel phases. Insights are presented into fundamental properties and phenomena that can be difficult or impossible to study with alternative computational or experimental methods. For example, we investigate the internal pressure distribution, dipole potential, lipid diffusion, and spontaneous self-assembly. Simulations lasting up to 1.5 microseconds were conducted for systems of different sizes (128, 512 and 1058 lipids); this also allowed us to identify size-dependent artifacts that are expected to affect membrane simulations in general. Future extensions and applications are discussed, particularly in relation to the methodology's inherent multiscale capabilities