4 research outputs found

    QCL active region overheat in pulsed mode: effects of non-equilibrium heat dissipation on laser performance

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    Quantum cascade lasers are of high interest in the scientific community due to unique applications utilizing the emission in mid-IR range. The possible designs of QCL are quite limited and require careful engineering to overcome some crucial disadvantages. One of them is an active region (ARn) overheat, that significantly affects the laser characteristics in the pulsed operation mode. In this work we consider the effects related to the non-equilibrium temperature distribution, when thermal resistance formalism is irrelevant. We employ the heat equation and discuss the possible limitations and structural features stemming from the chemical composition of the AR. We show that the presence of alloys in the ARn structure fundamentally limits the heat dissipation in pulsed and CW regimes due to their low thermal conductivity. Also the QCL post-growths affects the thermal properties of a device only in (near)CW mode while it is absolutely invaluable in the pulsed mod

    AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

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    Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negligible red shift of the emission wavelength is observed in the whole range of drive currents at nanosecond-range pulses with duty cycles well below 1%. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major mechanism of the LED efficiency reduction at higher pumping, dominating over the electron overflow and Auger recombination

    Temperature effects on optical properties and efficiency of red AlGaInP-based light emitting diodes under high current pulse pumping

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    In this paper, current-dependent emission spectra and efficiency measured on the same AlGaInP red light-emitting diode (LED) pumped with the current pulses of very different durations are recorded. This enabled for the first time distinguishing between high-carrier concentration and self-heating effects on the efficiency decline at high current magnitudes. The electron leakage to the p-side of the LED structure, which is the major mechanism of the efficiency reduction, is found to rise substantially when the device self-heating starts to develop. As a result, in comparison to continuous-wave excitation, driving the LED with sub-microsecond current pulses allows suppressing the device self-heating and, eventually, increasing the operating current by an order of magnitude without noticeable efficiency losses. Based on the reduced ABC-model, neglecting Auger recombination, the light extraction efficiency, injection efficiency, and internal quantum efficiency of the LED are estimated, suggesting light extraction to be the most critical factor for the overall efficiency of the LED. The coupled spectral/power LED characterization using the variable-duration current pulse pumping is found to be an effective approach for analyzing mechanisms of the device operation

    Active Region Overheating in Pulsed Quantum Cascade Lasers: Effects of Nonequilibrium Heat Dissipation on Laser Performance

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    Mid IR Quantum cascade lasers are of high interest for the scientific community due to their unique applications. However, the QCL designs require careful engineering to overcome some crucial disadvantages. One of them is active region (ARn) overheating, which significantly affects laser characteristics, even in the pulsed mode. In this work, we consider the effects related to the nonequilibrium temperature distribution when thermal resistance formalism is irrelevant. We employ the heat equation and discuss the possible limitations and structural features stemming from the chemical composition of the ARn. We show that the presence of solid solutions in the ARn structure fundamentally limits the heat dissipation in pulsed and CW regimes due to their low thermal conductivity compared with binary compounds. Also, the QCL postgrowths affect the thermal properties of a device closer to CW mode, while it is by far less important in the short-pulsed mode
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