Light Turning Mirrors in SiON Optical Waveguides for Hybrid Integration with CMOS Photo-detectors

A new method is proposed for hybrid integration of SiON optical waveguides and standard CMOS photo-detectors based on anisotropic etching of 45° facets in a Si substrate. After removal of anisotropically etched Si structures in cladding SiO2, the fabricated total-internal-reflection mirrors can direct the output of the waveguides to photo-detectors placed on top of the chip. The metal-free fabrication process, designed to create these mirrors, is convenient for batch production. Fourier optics based simulations predict that the reflection efficiency of the mirrors is 68.5 %. The far field pattern obtained from the fabricated device is similar to the simulated one

45° light turning mirrors for hybrid integration of silica optical waveguides and photo-detectors

For hybrid integration of an optical chip with an electronic chip with photo diodes and electronic processing, light must be coupled from the optical chip to the electronic chip. This paper presents a method to fabricate metal-free 45° quasi-total internal reflecting mirrors in optical chips that enable 90° out-of-plane light coupling between flip-chip bonded chips. This method is fully compatible with fabrication of conventional optical chips. The mirrors are created using anisotropic etching of 45° facets in a Si substrate followed by fabrication of optical structures. After removal of the mirror-defining Si structures by isotropic etching, the obtained air-optical structure interface directs the output of the waveguides to out-of-plane photo detectors that are mounted flip-chip on the optical chip. Simulations show a reflection efficiency of 72.3 %, while experimentally 47% was measured on a not fully optimized first batch

Use of integrated optical waveguide probes as an alternative to fiber probes for sensing of light backscattered from small volumes

We show that for light collection from thin samples, integrated probes can present a higher efficiency than conventional fiber probes, despite having a smaller collection area. Simulation results are validated by experiments

Climate research Netherlands : research highlights

In the Netherlands the temperature has risen, on average, by 1.6°C since 1900. Regional climate scenarios for the 21st century developed by the Dutch Royal Meteorological Institute [1] show that temperature in the Netherlands will continue to rise and mild winters and hot summers will become more common. On average winters will become wetter and extreme precipitation amounts will increase. The intensity of extreme rain showers in summer will increase and the sea level will continue to rise. Changing climate will affect all segments and sectors of the society and the economy of the Netherlands, but it also brings new opportunities for major innovation

Microwave-induced nonequilibrium temperature in a suspended carbon nanotube

Antenna-coupled suspended single carbon nanotubes exposed to 108 GHz microwave radiation are shown to be selectively heated with respect to their metal contacts. This leads to an increase in the conductance as well as to the development of a power-dependent DC voltage. The increased conductance stems from the temperature dependence of tunneling into a one-dimensional electron system. The DC voltage is interpreted as a thermovoltage, due to the increased temperature of the electron liquid compared to the equilibrium temperature in the leads

Arrayed-waveguide-grating light collector for on-chip spectroscopy

We present a novel arrayed-waveguide-grating (AWG) device with improved external (biomedical) signal collection for use in on-chip spectroscopy. The collection efficiency of the device is compared to that of a standard AWG. We also present experimental results on the collection efficiency and size of the collection volume

Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 W/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.Comment: 7 pages, 4 figures, submitted to Journal of low temperature physics, Proceedings of LTD-1