124 research outputs found

    Optical characterisation of anatase: a comparative study of the bulk crystal and the polycrystalline thin film

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    The optical parameters of crystalline anatase and polycrystalline anatase films prepared by reactive magnetron sputtering were examined by spectroscopic ellipsometry and optical transmittance spectroscopy, respectively. Some films were doped with aluminium or chromium. In general, the values of the optical bandgap for the films are consistently blue-shifted as compared with the crystal. The blue shift is also found for some films doped with Al and Cr. The width of the absorption bands is considerably narrower in the films than in the crystal. These effects are interpreted as resulting from the spatial confinement of electrons and holes in the TiO2 microcrystallites. The average crystallite size determined from the shift of the optical gap was found to be in the range ~5–8 nm, in excellent agreement with the data obtained from small-angle X-ray diffractometry

    Nanoscale study of the as-grown hydrogenated amorphous silicon surface

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    A scanning tunneling microscope has been used to study the topography of the as-grown surface of device-quality, intrinsic, hydrogenated amorphous silicon deposited by rf discharge from silane. The substrates were atomically flat, oxide-free, single-crystal silicon or gallium arsenide. No evidence for island formation or nanoscale irregularities was seen in studies of 100-Å-thick films on either silicon or gallium arsenide. The topography of 1000- and 4000-Å-thick films has much variation; many regions can be characterized as rolling hills, but atomically flat areas have also been observed nearby. Generally, it appears that surface diffusion plays a role in smoothing the film topography. In most regions, the observed slopes were 10% or less from horizontal, but some steep-sided valleys, indicating incipient voids, were observed. The effect of the finite size of the scanning tunneling microscope probe tip is considered; this has an effect on the observed images in some cases

    Canine models of copper toxicosis for understanding mammalian copper metabolism

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    Hereditary forms of copper toxicosis exist in man and dogs. In man, Wilson’s disease is the best studied disorder of copper overload, resulting from mutations in the gene coding for the copper transporter ATP7B. Forms of copper toxicosis for which no causal gene is known yet are recognized as well, often in young children. Although advances have been made in unraveling the genetic background of disorders of copper metabolism in man, many questions regarding disease mechanisms and copper homeostasis remain unanswered. Genetic studies in the Bedlington terrier, a dog breed affected with copper toxicosis, identified COMMD1, a gene that was previously unknown to be involved in copper metabolism. Besides the Bedlington terrier, a number of other dog breeds suffer from hereditary copper toxicosis and show similar phenotypes to humans with copper storage disorders. Unlike the heterogeneity of most human populations, the genetic structure within a purebred dog population is homogeneous, which is advantageous for unraveling the molecular genetics of complex diseases. This article reviews the work that has been done on the Bedlington terrier, summarizes what was learned from studies into COMMD1 function, describes hereditary copper toxicosis phenotypes in other dog breeds, and discusses the opportunities for genome-wide association studies on copper toxicosis in the dog to contribute to the understanding of mammalian copper metabolism and copper metabolism disorders in man

    Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition

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    The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized

    GROWTH CHARACTERIZATION OF a Si:H FILMS BY MULTIPLE ANGLE OF INCIDENCE SPECTROSCOPIC ELLIPSOMETRY

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    Les processus de croissance et les propriĂ©tĂ©s optiques de couches minces de silicium amorphe hydrogĂ©nĂ© (a-Si:H) dĂ©posĂ©es Ă  partir de la dĂ©composition du silane par plasma sont Ă©tudiĂ©s in situ par ellipsomĂ©trie en temps rĂ©el et ellipsomĂ©trie spectroscopique Ă  trois angles d'incidence. On montre que le dĂ©pĂŽt d'ions SiH+n accĂ©lĂ©rĂ©s (20-100 eV) favorise une croissance homogĂšne et une densification de la couche alors que le dĂ©pĂŽt d'ions non accĂ©lĂ©rĂ©s ou de radicaux neutres engendre un processus de croissance non homogĂšne, oĂč l'indice de rĂ©fraction et la densitĂ© de la couche dĂ©pendent de son Ă©paisseur.The growth mechanism and the optical properties of hydrogenated amorphous silicon (a-Si:H) films, deposited from silane plasma decomposition, are studied in situ by real time and spectroscopic ellipsometry at three angles of incidence. Deposition of accelerated (20-100 eV) SiH+n ions is shown to favour homogeneous and isotropic film growth and film densification. On the contrary deposition of non accelerated ions and/or neutral species results in an inhomogeneous growth mechanism with thickness dependent film index and density
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