Grain-boundary grooving and agglomeration of alloy thin films with a slow-diffusing species

We present a general phase-field model for grain-boundary grooving and agglomeration of polycrystalline alloy thin films. In particular, we study the effects of slow-diffusing species on grooving rate. As the groove grows, the slow species becomes concentrated near the groove tip so that further grooving is limited by the rate at which it diffuses away from the tip. At early times the dominant diffusion path is along the boundary, while at late times it is parallel to the substrate. This change in path strongly affects the time-dependence of grain boundary grooving and increases the time to agglomeration. The present model provides a tool for agglomeration-resistant thin film alloy design. keywords: phase-field, thermal grooving, diffusion, kinetics, metal silicidesComment: 4 pages, 6 figure

Phase-field model for grain boundary grooving in multi-component thin films

Polycrystalline thin films can be unstable with respect to island formation (agglomeration) through grooving where grain boundaries intersect the free surface and/or thin film-substrate interface. We develop a phase-field model to study the evolution of the phases, composition, microstructure and morphology of such thin films. The phase-field model is quite general, describing compounds and solid solution alloys with sufficient freedom to choose solubilities, grain boundary and interface energies, and heats of segregation to all interfaces. We present analytical results which describe the interface profiles, with and without segregation, and confirm them using numerical simulations. We demonstrate that the present model accurately reproduces the theoretical grain boundary groove angles both at and far from equilibrium. As an example, we apply the phase-field model to the special case of a Ni(Pt)Si (Ni/Pt silicide) thin film on an initially flat silicon substrate.Comment: 12 pages, 5 figures, submitted to Modelling Simulation Mater. Sci. En

Reply to: Mobility overestimation in MoS2_2 transistors due to invasive voltage probes

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion