Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers

Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain and non-random formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the {\em cubic} term: the theory predicts switchings of the easy axis between in-plane $\langle 100\rangle$ and $\langle 110\rangle$ directions as a function of the hole concentration, whereas only the $\langle 100\rangle$ orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field $p$-$d$ Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven non-uniformities of the carrier density, both favoring the $\langle 100\rangle$ direction of the apparent easy axis. However, according to our results, when the disorder gets reduced a switching to the $\langle 110\rangle$ orientation is possible in a certain temperature and hole concentration range.Comment: 12 pages, 9 figure

Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Postgrowth annealing treatment has been shown to enhance the hole concentration and Curie temperature in the layers. Significant increase in the magnitude of magnetotransport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. Two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices.Comment: 10 pages, 3 figures, to be published in the Proceedings of ICSM-2016 conferenc

Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.Comment: 13 pages, 4 figure

Entropy in Spin Foam Models: The Statistical Calculation

Recently an idea for computing the entropy of black holes in the spin foam formalism has been introduced. Particularly complete calculations for the three dimensional euclidean BTZ black hole were done. The whole calculation is based on observables living at the horizon of the black hole universe. Departing from this idea of observables living at the horizon, we now go further and compute the entropy of BTZ black hole in the spirit of statistical mechanics. We compare both calculations and show that they are very interrelated and equally valid. This latter behaviour is certainly due to the importance of the observables.Comment: 11 pages, 1 figur

Analysis of the Electronic and Band-Structure in As-grown and Annealed (Ga,Mn)As Epitaxial Layers

The photoreflectance (PR) spectroscopy was applied to study the band-structure evolution in (Ga,Mn)As layers with increasing Mn content. We investigated (Ga,Mn)As layers and, as a reference, undoped GaAs layer, grown by LT-MBE on semi-insulating (001) GaAs substrates. Photoreflectance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the (Ga,Mn)As films were characterized with a superconducting quantum interference device (SQUID) magnetometer. In addition, we investigated impact of the annealing of 100 nm (Ga,Mn)As layers with 6% of the Mn content on the electronic and band structure as well as on the electrical and magnetic properties of these films. Our findings were interpreted in terms of the model, which assumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3499

Towards a spin foam model description of black hole entropy

We propose a way to describe the origin of black hole entropy in the spin foam models of quantum gravity. This stimulates a new way to study the relation of spin foam models and loop quantum gravity.Comment: 5 pages, 1 figur

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers separated by 25, 50 and 100 A thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 C), and then annealed at high temperatures of: 400, 560 and 630 C. The high temperature annealing causes decomposition to GaMnAs ternary alloy and formation of (Mn,Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga,Mn)As layers for up to the 560 C of annealing and diffuse throughout the GaAs spacer layers at 630 C annealing. The corresponding magnetization measurements show the evolution of the magnetic properties of as-grown and annealed samples from ferromagnetic, through superparamagnetic to the combination of both.Comment: 14 pages, 3 figure

Entropy of generic quantum isolated horizons

We review our recent proposal of a method to extend the quantization of spherically symmetric isolated horizons, a seminal result of loop quantum gravity, to a phase space containing horizons of arbitrary geometry. Although the details of the quantization remain formally unchanged, the physical interpretation of the results can be quite different. We highlight several such differences, with particular emphasis on the physical interpretation of black hole entropy in loop quantum gravity.Comment: 4 pages, contribution to loops '11 conference proceedings; 2 references added, a sentence remove