6 research outputs found

    The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

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    It is shown that addition of Gd to the melt during liquid phase epitaxy growth of InGaAsSb layers greatly reduces contamination of the samples with residual donor impurities, such as sulfur and silicon. The effect is related to Gd gettering of these impurities in the melt. © 1994

    Plasma Flow and Related Phenomena in Planetary Aeronomy

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    The Induced Magnetospheres of Mars, Venus, and Titan

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    Solar Science with the Atacama Large Millimeter/Submillimeter Array—A New View of Our Sun

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