Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrod

Western Star, 1911-11-29

The Western Star began publication on Newfoundland's west coast on 4 April 1900, appearing weekly with brief semiweekly periods up to 1952, when it became a daily. As of 17 April 2019 it continues as a free weekly community paper

Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

We have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO3 films. (C) 2009 Elsevier Ltd. All rights reserved

Cobalt disilicide-induced crystallization of amorphous silicon under XeCl excimer laser irradiation

none9S. LUBY; E. MAJKOVA; M. JERGEL; E. D'ANNA; A. LUCHES; M. MARTINO; P. MENGUCCI; G. MAJNI; E. DOBROCKAS., Luby; E., Majkova; M., Jergel; E., D'Anna; A., Luches; M., Martino; Mengucci, Paolo; G., Majni; E., Dobrock

Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

We studied the leakage current mechanism in Ru-gated MOS capacitors with ultrathin Hf/sub x/Si/sub 1-x/O/sub y/ gate dielectrics grown by atomic vapour deposition (AVD/sup Reg./). The dielectrics were annealed by rapid thermal annealing in oxygen atmosphere at temperatures ranging from 700 to 1000 degrees C. Temperature dependent current-voltage characteristics exhibit trap-assisted tunneling through the Hf-silicate film annealed at 700 degrees C. The energy trap level is 2 eV below the dielectric conduction band edge. On the other hand, direct tunneling was found to control the leakage current through gate dielectrics annealed at 800 and 900 degrees C. Based on a microstructural study, the trap level was attributed to hafnia oxygen vacancies in the Hf-silicate. [All rights reserved Elsevier

Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrod