1,861 research outputs found
Noncollinear Ferromagnetism in (III,Mn)V Semiconductors
We investigate the stability of the collinear ferromagnetic state in kinetic
exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions
>. Our results suggest that {\em noncollinear ferromagnetism} is commom to
these semiconductor systems. The instability of the collinear state is due to
long-ranged fluctuations invloving a large fraction of the localized magnetic
moments. We address conditions that favor the occurrence of noncollinear
groundstates and discuss unusual behavior that we predict for the temperature
and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects
simplified, version to appear in Phys. Rev. Let
Light and electric field control of ferromagnetism in magnetic quantum structures
A strong influence of illumination and electric bias on the Curie temperature
and saturation value of the magnetization is demonstrated for semiconductor
structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well
placed in various built-in electric fields. It is shown that both light beam
and bias voltage generate an isothermal and reversible cross-over between the
paramagnetic and ferromagnetic phases, in the way that is predetermined by the
structure design. The observed behavior is in quantitative agreement with the
expectations for systems, in which ferromagnetic interactions are mediated by
the weakly disordered two-dimensional hole liquid.Comment: 4 pages and 3 figure
Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
The magnetic behavior of insulating doped diluted magnetic semiconductors
(DMS) is characterized by the interaction of large collective spins known as
bound magnetic polarons. Experimental measurements of the susceptibility of
these materials have suggested that the polaron-polaron interaction is
ferromagnetic, in contrast to the antiferromagnetic carrier-carrier
interactions that are characteristic of nonmagnetic semiconductors. To explain
this behavior, a model has been developed in which polarons interact via both
the standard direct carrier-carrier exchange interaction (due to virtual
carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due
to the interactions of polarons with magnetic ions in an interstitial region).
Using a variational procedure, the optimal values of the model parameters were
determined as a function of temperature. At temperatures of interest, the
parameters describing polaron-polaron interactions were found to be nearly
temperature-independent. For reasonable values of these constant parameters, we
find that indirect ferromagnetic interactions can dominate the direct
antiferromagnetic interactions and cause the polarons to align. This result
supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure
Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
Over the last decade the search for compounds combining the resources of
semiconductors and ferromagnets has evolved into an important field of
materials science. This endeavour has been fuelled by continual demonstrations
of remarkable low-temperature functionalities found for ferromagnetic
structures of (Ga,Mn)As, p-(Cd,Mn)Te, and related compounds as well as by ample
observations of ferromagnetic signatures at high temperatures in a number of
non-metallic systems. In this paper, recent experimental and theoretical
developments are reviewed emphasising that, from the one hand, they disentangle
many controversies and puzzles accumulated over the last decade and, on the
other, offer new research prospects.Comment: review, 13 pages, 8 figures, 109 reference
Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors
We present a numerical model study of the zero-temperature infrared optical
properties of (III,Mn)V diluted magnetic semiconductors. Our calculations
demonstrate the importance of treating disorder and interaction effects
simultaneously in modelling these materials. We find that the conductivity has
no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and
that oscillator weight is shifted to higher frequencies by stronger disorder.
These results are in good qualitative agreement with recent thin film
absorption measurements. We use our numerical findings to discuss the use of
f-sum rules evaluated by integrating optical absorption data for accurate
carrier-density estimates.Comment: 7 pages, 3 figure
Electronic and magnetic properties of substitutional Mn clusters in (Ga,Mn)As
The magnetization and hole distribution of Mn clusters in (Ga,Mn)As are
investigated by all-electron total energy calculations using the projector
augmented wave method within the density-functional formalism. It is found that
the energetically most favorable clusters consist of Mn atoms surrounding one
center As atom. As the Mn cluster grows the hole band at the Fermi level splits
increasingly and the hole distribution gets increasingly localized at the
center As atom. The hole distribution at large distances from the cluster does
not depend significantly on the cluster size. As a consequence, the spin-flip
energy differences of distant clusters are essentially independent of the
cluster size. The Curie temperature is estimated directly from these
spin-flip energies in the mean field approximation. When clusters are present
estimated values are around 250 K independent of Mn concentration whereas
for a uniform Mn distribution we estimate a of about 600 K.Comment: 7 pages, 5 figures, 2 tables; Revised manuscript 26. May 200
Spinodal nanodecomposition in magnetically doped semiconductors
This review presents the recent progress in computational materials design,
experimental realization, and control methods of spinodal nanodecomposition
under three- and two-dimensional crystal-growth conditions in spintronic
materials, such as magnetically doped semiconductors. The computational
description of nanodecomposition, performed by combining first-principles
calculations with kinetic Monte Carlo simulations, is discussed together with
extensive electron microscopy, synchrotron radiation, scanning probe, and ion
beam methods that have been employed to visualize binodal and spinodal
nanodecomposition (chemical phase separation) as well as nanoprecipitation
(crystallographic phase separation) in a range of semiconductor compounds with
a concentration of transition metal (TM) impurities beyond the solubility
limit. The role of growth conditions, co-doping by shallow impurities, kinetic
barriers, and surface reactions in controlling the aggregation of magnetic
cations is highlighted. According to theoretical simulations and experimental
results the TM-rich regions appear either in the form of nanodots (the {\em
dairiseki} phase) or nanocolumns (the {\em konbu} phase) buried in the host
semiconductor. Particular attention is paid to Mn-doped group III arsenides and
antimonides, TM-doped group III nitrides, Mn- and Fe-doped Ge, and Cr-doped
group II chalcogenides, in which ferromagnetic features persisting up to above
room temperature correlate with the presence of nanodecomposition and account
for the application-relevant magneto-optical and magnetotransport properties of
these compounds. Finally, it is pointed out that spinodal nanodecomposition can
be viewed as a new class of bottom-up approach to nanofabrication.Comment: 72 pages, 79 figure
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