Noncollinear Ferromagnetism in (III,Mn)V Semiconductors

We investigate the stability of the collinear ferromagnetic state in kinetic exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions >. Our results suggest that {\em noncollinear ferromagnetism} is commom to these semiconductor systems. The instability of the collinear state is due to long-ranged fluctuations invloving a large fraction of the localized magnetic moments. We address conditions that favor the occurrence of noncollinear groundstates and discuss unusual behavior that we predict for the temperature and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects simplified, version to appear in Phys. Rev. Let

Light and electric field control of ferromagnetism in magnetic quantum structures

A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.Comment: 4 pages and 3 figure

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure

Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective

Over the last decade the search for compounds combining the resources of semiconductors and ferromagnets has evolved into an important field of materials science. This endeavour has been fuelled by continual demonstrations of remarkable low-temperature functionalities found for ferromagnetic structures of (Ga,Mn)As, p-(Cd,Mn)Te, and related compounds as well as by ample observations of ferromagnetic signatures at high temperatures in a number of non-metallic systems. In this paper, recent experimental and theoretical developments are reviewed emphasising that, from the one hand, they disentangle many controversies and puzzles accumulated over the last decade and, on the other, offer new research prospects.Comment: review, 13 pages, 8 figures, 109 reference

Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.Comment: 7 pages, 3 figure

Electronic and magnetic properties of substitutional Mn clusters in (Ga,Mn)As

The magnetization and hole distribution of Mn clusters in (Ga,Mn)As are investigated by all-electron total energy calculations using the projector augmented wave method within the density-functional formalism. It is found that the energetically most favorable clusters consist of Mn atoms surrounding one center As atom. As the Mn cluster grows the hole band at the Fermi level splits increasingly and the hole distribution gets increasingly localized at the center As atom. The hole distribution at large distances from the cluster does not depend significantly on the cluster size. As a consequence, the spin-flip energy differences of distant clusters are essentially independent of the cluster size. The Curie temperature $T_C$ is estimated directly from these spin-flip energies in the mean field approximation. When clusters are present estimated $T_C$ values are around 250 K independent of Mn concentration whereas for a uniform Mn distribution we estimate a $T_C$ of about 600 K.Comment: 7 pages, 5 figures, 2 tables; Revised manuscript 26. May 200

Spinodal nanodecomposition in magnetically doped semiconductors

This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Monte Carlo simulations, is discussed together with extensive electron microscopy, synchrotron radiation, scanning probe, and ion beam methods that have been employed to visualize binodal and spinodal nanodecomposition (chemical phase separation) as well as nanoprecipitation (crystallographic phase separation) in a range of semiconductor compounds with a concentration of transition metal (TM) impurities beyond the solubility limit. The role of growth conditions, co-doping by shallow impurities, kinetic barriers, and surface reactions in controlling the aggregation of magnetic cations is highlighted. According to theoretical simulations and experimental results the TM-rich regions appear either in the form of nanodots (the {\em dairiseki} phase) or nanocolumns (the {\em konbu} phase) buried in the host semiconductor. Particular attention is paid to Mn-doped group III arsenides and antimonides, TM-doped group III nitrides, Mn- and Fe-doped Ge, and Cr-doped group II chalcogenides, in which ferromagnetic features persisting up to above room temperature correlate with the presence of nanodecomposition and account for the application-relevant magneto-optical and magnetotransport properties of these compounds. Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication.Comment: 72 pages, 79 figure