High-temperature thin-film barriers for foldable AMOLED displays

\u3cp\u3eWe present a thin-film dual-layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light-emitting diode displays and that can facilitate foldable active-matrix organic light-emitting diode devices with a bending radius of <2 mm. We demonstrate organic light-emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high-temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active-matrix organic light-emitting diode displays on GEN1-sized substrates.\u3c/p\u3

Low-temperature IGZO TFT backplane and its application in flexible AMOLED displays on ultrathin polymer films

We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm

High-temperature thin-film barriers for foldable AMOLED displays

We present a thin-film dual-layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light-emitting diode displays and that can facilitate foldable active-matrix organic light-emitting diode devices with a bending radius of <2 mm. We demonstrate organic light-emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high-temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active-matrix organic light-emitting diode displays on GEN1-sized substrates

Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications

\u3cp\u3eWe present a qHD (960 × 540 with three sub-pixels) top-emitting active-matrix organic light-emitting diode display with a 340-ppi resolution using a self-aligned IGZO thin-film transistor backplane on polyimide foil with a humidity barrier. The back plane process flow is based on a seven-layer photolithography process with a CD = 4 μm. We implement a 2T1C pixel engine and use a commercial source driver IC made for low-temperature polycrystalline silicon. By using an IGZO thin-film transistor and leveraging the extremely low off current, we can switch off the power to the source and gate driver while maintaining the image unchanged for several minutes. We demonstrate that, depending on the image content, low-refresh operation yields reduction in power consumption of up to 50% compared with normal (continuous) operation. We show that with the further increase in resolution, the power saving through state retention will be even more significant.\u3c/p\u3

Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications

\u3cp\u3eWe present a qHD (960×540 with 3 sub-pixels) top-emitting ‘AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimidefoil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2TIC pixel engine and use commercial source driver IC made for LTPS. By using IGZO TFT and leveraging the extremely low off-current, we can switch-offthe power to the source and gate driver while maintaining the image un-changed for several minutes We demonstrate that, depending on the image content, low-refresh operation yields reduction in power consumption of up to 50% compared to normal (continuous) operation. We show that with further increase in resolution, the power saving through state retention will be even more significant.\u3c/p\u3

Dual-gate self-aligned IGZO TFTs monolithically integrated with high-temperature bottom moisture barrier for flexible AMOLED

\u3cp\u3eWe present a 350°C self-aligned dual-gate a-IGZO backplane technology with a monolithically integrated multi-layer high-temperature thin-film barrier for flexible AMOLED. Thin-film barrier properties and TFT technology are optimized on 320 x 352mm substrates, and demonstrated in a flexible QQVGA 100 ppi AMOLED display prototype.\u3c/p\u3