SPICE model of memristive devices with threshold

Although memristive devices with threshold voltages are the norm rather than the exception in experimentally realizable systems, their SPICE programming is not yet common. Here, we show how to implement such systems in the SPICE environment. Specifically, we present SPICE models of a popular voltage-controlled memristive system specified by five different parameters for PSPICE and NGSPICE circuit simulators. We expect this implementation to find widespread use in circuits design and testing

On the validity of memristor modeling in the neural network literature

An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the results presented in a significant number of publications are at least questionable, if not completely irrelevant to the actual field of memristive neural networks

Teaching Memory Circuit Elements via Experiment-Based Learning

The class of memory circuit elements which comprises memristive, memcapacitive, and meminductive systems, is gaining considerable attention in a broad range of disciplines. This is due to the enormous flexibility these elements provide in solving diverse problems in analog/neuromorphic and digital/quantum computation; the possibility to use them in an integrated computing-memory paradigm, massively-parallel solution of different optimization problems, learning, neural networks, etc. The time is therefore ripe to introduce these elements to the next generation of physicists and engineers with appropriate teaching tools that can be easily implemented in undergraduate teaching laboratories. In this paper, we suggest the use of easy-to-build emulators to provide a hands-on experience for the students to learn the fundamental properties and realize several applications of these memelements. We provide explicit examples of problems that could be tackled with these emulators that range in difficulty from the demonstration of the basic properties of memristive, memcapacitive, and meminductive systems to logic/computation and cross-bar memory. The emulators can be built from off-the-shelf components, with a total cost of a few tens of dollars, thus providing a relatively inexpensive platform for the implementation of these exercises in the classroom. We anticipate that this experiment-based learning can be easily adopted and expanded by the instructors with many more case studies.Comment: IEEE Circuits and Systems Magazine (in press

The implications of resonant x-ray scattering data on the physics of the insulating phase of V_2O_3

We have performed a quantitative analysis of recent resonant x-ray scattering experiments carried out in the antiferromagnetic phase of V_2O_3 by means of numerical ab-initio simulations. In order to treat magnetic effects, we have developed a method based on multiple scattering theory (MST) and a relativistic extension of the Schr\"{o}dinger Equation, thereby working with the usual non relativistic set of quantum numbers $l,m,\sigma$ for angular and spin momenta. Electric dipole-dipole (E1-E1), dipole-quadrupole (E1-E2) and quadrupole-quadrupole (E2-E2) transition were considered altogether. We obtain satisfactory agreement with experiments, both in energy and azimuthal scans. All the main features of the V K edge Bragg-forbidden reflections with $h+k+l=$odd can be interpreted in terms of the antiferromagnetic ordering only, {\it ie}, they are of magnetic origin. In particular the ab-initio simulation of the energy scan around the (1,1,1)-monoclinic reflection excludes the possibility of any symmetry reduction due to a time-reversal breaking induced by orbital ordering.Comment: 11 pages, 6 figure