Spectral density and metal-insulator phase transition in Mott insulators within RDMFT

We present a method for calculating the spectrum of periodic solids within reduced density matrix functional theory. This method is validated by a detailed comparison of the angular momentum projected spectral density with that of well established many-body techniques, in all cases finding an excellent agreement. The physics behind the pressure induced insulator-metal phase transition in MnO is investigated. The driving mechanism of this transition is identified as increased crystal field splitting with pressure, resulting in a charge redistribution between the Mn $e_g$ and $t_2g$ symmetry projected states.Comment: arXiv admin note: text overlap with arXiv:0912.111

Reduced Density Matrix Functional for Many-Electron Systems

Reduced density matrix functional theory for the case of solids is presented and a new exchange correlation functional based on a fractional power of the density matrix is introduced. We show that compared to other functionals, this produces more accurate results for both finite systems. Moreover, it captures the correct band gap behavior for conventional semiconductors as well as strongly correlated Mott insulators, where a gap is obtained in absence of any magnetic ordering.Comment: 4 figs and 1 tabl

The generalized gradient approximation kernel in time-dependent density functional theory

A complete understanding of a material requires both knowledge of the excited states as well as of the ground state. In particular, the low energy excitations are of utmost importance while studying the electronic, magnetic, dynamical, and thermodynamical properties of the material. Time-Dependent Density Functional Theory (TDDFT), within the linear regime, is a successful \textit{ab-initio} method to access the electronic charge and spin excitations. However, it requires an approximation to the exchange-correlation (XC) kernel which encapsulates the effect of electron-electron interactions in the many-body system. In this work we derive and implement the spin-polarized XC kernel for semi-local approximations such as the adiabatic Generalized Gradient Approximation (AGGA). This kernel has a quadratic dependence on the wavevector, {\bf q}, of the perturbation, however the impact of this on the electron energy loss spectra (EELS) is small. Although the GGA functional is good in predicting structural properties, it generality overestimates the exchange spin-splitting. This leads to higher magnon energies, as compared to both ALDA and experiment. In addition, interaction with the Stoner spin-flip continuum is enhanced by AGGA, which strongly suppresses the intensity of spin-waves.Comment: 11 pages, 7 figure

Enhanced excitonic effects in the energy loss spectra of LiF and Ar at large momentum transfer

It is demonstrated that the bootstrap kernel [\onlinecite{sharma11}] for finite values of ${\bf q}$ crucially depends upon the matrix character of the kernel and gives results of the same good quality as in the ${\bf q} \rightarrow 0$ limit. The bootstrap kernel is further used to study the electron loss as well as absorption spectra for Si, LiF and Ar for various values of ${\bf q}$. The results show that the excitonic effects in LiF and Ar are enhanced for values of ${\bf q}$ away from the $\Gamma$-point. The reason for this enhancement is the interaction between the exciton and high energy inter-band electron-hole transitions. This fact is validated by calculating the absorption spectra under the influence of an external electric field. The electron energy loss spectra is shown to change dramatically as a function of ${\bf q}$

All-electron Exact Exchange Treatment of Semiconductors: Effect of Core-valence Interaction on Band-gap and dd-band Position

Exact exchange (EXX) Kohn-Sham calculations within an all-electron full-potential method are performed on a range of semiconductors and insulators (Ge, GaAs, CdS, Si, ZnS, C, BN, Ne, Ar, Kr and Xe). We find that the band-gaps are not as close to experiment as those obtained from previous pseudopotential EXX calculations. Full-potential band-gaps are also not significantly better for $sp$ semiconductors than for insulators, as had been found for pseudopotentials. The locations of $d$-band states, determined using the full-potential EXX method, are in excellent agreement with experiment, irrespective of whether these states are core, semi-core or valence. We conclude that the inclusion of the core-valence interaction is necessary for accurate determination of EXX Kohn-Sham band structures, indicating a possible deficiency in pseudopotential calculations.Comment: 4 pages 2 fig