Spatio-Temporal Electron Propagation Dynamics in Au/Fe/MgO(001) in nonequilibrium: Revealing Single Scattering Events and the Ballistic Limit

Understanding the microscopic spatio-temporal dynamics of nonequilibrium charge carriers in heterosystems promises optimization of process and device design towards desired energy transfer. Hot electron transport is governed by scattering with other electrons, defects, and bosonic excitations. Analysis of the energy dependence of scattering pathways and identification of diffusive, super-diffusive, and ballistic transport regimes are current challenges. We determine in femtosecond time-resolved two-photon photoelectron emission spectroscopy the energy-dependent change of the electron propagation time through epitaxial Au/Fe(001) heteostructures as a function of Au layer thickness for energies of 0.5 to \unit[2.0]{eV} above the Fermi energy. We describe the laser-induced nonequilibrium electron excitation and injection across the Fe/Au interface using real-time time-dependent density functional theory and analyze the electron propagation through the Au layer by microscopic electron transport simulations. We identify ballistic transport of minority electrons at energies with a nascent, optically excited electron population which is determined by the combination of photon energy and the specific electronic structure of the material. At lower energy, super-diffusive transport with 1 to 4 scattering events dominates. The effective electron velocity accelerates from 0.3 to \unit[1]{nm/fs} with an increase in the Au layer thickness from 10 to 100~nm. This phenomenon is explained by electron transport that becomes preferentially aligned with the interface normal for thicker Au layers, which facilitates electron momentum / energy selection by choice of the propagation layer thickness

Trapping of transient processes in aluminium oxide thin films in a voltage pulse experiment

An experimental setup is presented that allows the trapping of transient states in potentiostatic and potentiodynamic experiments. The setup is suitable for electrochemical experiments as well as for dielectric investigations. The system stops an experiment by triggering at a predefined current level after a minimum time of the voltage pulse. The advantage of this device is demonstrated by means of a voltage pulse annealing procedure for a metal–insulator–metal (MIM) contact with an anodically prepared aluminium oxide film as insulator. The setup significantly increases the stability against a breakdown of the anodic oxide film. Keywords: Current transients, Dielectric films, Aluminium, Tunnelling, Electrochemistry, MI