ROLE OF VYOSHADI GUGGULU IN MEDOROG (OBESITY) ASSOCIATED WITH DYSLIPIDEMIA: A CASE STUDY

Medorog (obesity) has been described extensively in various Ayurvedic texts. Acharya Charak has described Medorog among the eight most unwanted diseases (Ninditpurush) Samtarpanajanita Roga. Medorog can be compared with obesity in modern terminology. Obesity is the condition in which excess body fat has accumulated to the extent that it may have an adverse effect on health, leading to reduced life expectancy and increased health problems. The most important cause of obesity is an energy imbalance between the calories consumed and calories expended which leads to the accumulation of fat. In 21st century, obesity is not less than any epidemic targeting more and more people every day. Over one out of every five persons in the world is obese. Obesity is such a disease which provides the platform for many life threatening hazards like dyslipidaemia etc. A case of Medorog associated with dyslipidaemia managed successfully by Ayurvedic treatment is reported here. A 49 year old female having sign and symptoms of Medorog was treated with Vyoshadiguggulu, a formulation of Ashtang Hridya in the dosage of 1gm. three times a day with 1 table Spoon of honey and lukewarm water for 90 days. Patient showed remarkable improvement in Obesity and dyslipidaemia after the treatment

Filament activated chemical vapor deposition of boron carbide coatings

In this study, we have demonstrated that boron carbide, an extremely hard and wear‐resistant material, can be deposited with hot filament‐activated chemical vapor deposition (HFCVD). There are several benefits to using a hot filament system, including a high deposition rate and a relatively low substrate temperature with a process that is not line‐of‐sight. High purity, apparently amorphous boron carbide films were obtained by the use of a chlorine based precursor (which is less toxic than diborane). This indicates that either the hot filament helps in complete decomposition of BCl3 or the presence of high concentration of atomic hydrogen in a HFCVD environment helps in scavenging the chlorine. © 1994 American Institue of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70919/2/APPLAB-65-14-1757-1.pd

Ultraviolet light induced changes in polyimide liquid‐crystal alignment films

Ultraviolet light induced changes in polyimide liquid‐crystal alignment films were investigated. Infrared, UV‐visible, x‐ray photoelectron spectroscopy, and electron‐spin‐resonance measure‐ ments indicated that bond breaking and subsequent oxidation reactions occur in polyimide films (SE7210, OCG284, DuPont 2555 and 2540) during the broadband UV illumination in air. Mechanical rubbing has no effect on the optical and magnetic properties but it causes the removal of the UV‐exposed film. Capacitance–voltage measurements indicate that there is a slight decrease in dielectric constant and creation of net negative charges in the film after UV exposure. Sur‐ face tension of polyimide films before and after UV illumination and changes in the pretilt angle of the polyimide surface following UV exposure have also been studied. The decrease in pretilt angle following UV illumination is attributed to an increase in surface tension. Our results indicate that a simple UV technique can be used to achieve domain divided liquid‐crystal pixel electrode design with improved viewing characteristics. © 1996 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70453/2/JAPIAU-80-9-5028-1.pd

Filament-activated chemical vapour deposition of nitride thin films

We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films. In this paper the results from our recent work on aluminium, silicon and titanium nitride have been reviewed. In the HFCVD method a hot tungsten filament (1500–1850°C) was utilised to decompose ammonia in order to deposit nitride films at low substrate temperatures and high rates. The substrate temperatures ranged from 245 to 600°C. The film properties were characterised by a number of analytical and optical methods. The effect of various deposition conditions on film properties was studied. All the films obtained were of high chemical purity and had very low or no detectable tungsten contamination from the filament metal.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/38579/1/221_ftp.pd

Hot filament assisted deposition of silicon nitride thin films

Hot filament assisted chemical vapor deposition (HFCVD) of silicon nitride thin films was studied with disilane (Si2H6) and ammonia (NH3) as the source gases. High optical density films were obtained at a low substrate temperature (375 °C) and high deposition rates (up to 1700 Å/min). The effects of disilane flow rate, filament temperature, and disilane carrier gas composition on film properties were investigated. Transmission infrared measurements showed low hydrogen content (<5%) in the films. Sputter depth profiling using x‐ray photoelectron spectroscopy indicated high film purity with only surface oxygen contamination from air exposure after deposition.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69495/2/APPLAB-61-12-1420-1.pd

Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

Silicon nitride films were deposited at low temperatures (245–370 °C) and high deposition rates (500–1700 Å/min) by hot filament assisted chemical vapor deposition (HFCVD). Optical properties of these amorphous silicon nitride thin films have been extensively characterized by absorption, photoluminescence (PL), photoluminescence excitation, and electroluminescence measurements. The optical band gap of the films was varied between 2.43 and 4.74 eV by adjusting the flow rate of the disilane source gas. Three broad peaks at 1.8, 2.4, and 3.0 eV were observed in the PL spectra from these films. A simple qualitative model based on nitrogen and silicon dangling bonds adequately explains the observed PL features. The photoluminescence intensity observed in these films was 8–10 times stronger than films deposited by plasma enhanced chemical vapor deposition, under similar conditions. The high deposition rates obtained by HFCVD is believed to introduce a large number of these optically active defects. © 1995 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69425/2/JAPIAU-77-12-6534-1.pd