Hot filament assisted deposition of silicon nitride thin films

Abstract

Hot filament assisted chemical vapor deposition (HFCVD) of silicon nitride thin films was studied with disilane (Si2H6) and ammonia (NH3) as the source gases. High optical density films were obtained at a low substrate temperature (375 °C) and high deposition rates (up to 1700 Å/min). The effects of disilane flow rate, filament temperature, and disilane carrier gas composition on film properties were investigated. Transmission infrared measurements showed low hydrogen content (<5%) in the films. Sputter depth profiling using x‐ray photoelectron spectroscopy indicated high film purity with only surface oxygen contamination from air exposure after deposition.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69495/2/APPLAB-61-12-1420-1.pd