The etching of InGaAs in acidic solutions of H2O2

C

Wet cleaning of InP surfaces

status: publishe

Enhanced Photocatalytic Activity of Nanoroughened GaN by Dry Etching

The influence of nanostructuring on the photoelectrochemical (PEC) properties of GaN is investigated. GaN nanopillar arrays are fabricated by inductively-coupled-plasma dry etching of a GaN epitaxial layer, using a self-assembled Ni cluster mask. Pillars of 0.4–1.6 μm in height were prepared and were investigated photoelectrochemically. After nanoroughening, the surface area increases up to 6 times and the plateau photocurrent increases by 84% with respect to planar GaN. The pillar structure provides abundant depletion area and therefore enhances the photocarrier separation. Surface recombination becomes more important after the dry etching process, as confirmed by the PEC and photoluminescence measurements.status: publishe

Diagnostic accuracy of audio-based seizure detection in patients with severe epilepsy and an intellectual disability

We evaluated the performance of audio-based detection of major seizures (tonic–clonic and long generalized tonic) in adult patients with intellectual disability living in an institute for residential care. Methods First, we checked in a random sample (n = 17, 102 major seizures) how many patients have recognizable sounds during these seizures. In the second part of this trial, we followed 10 patients (who had major seizures with recognizable sounds) during four weeks with an acoustic monitoring system developed by CLB (‘CLB-monitor’) and video camera. In week 1, we adapted the sound detection threshold until, per night, a maximum of 20 sounds was found. During weeks 2–4, we selected the epilepsy-related sounds and performed independent video verification and labeling (‘snoring’, ‘laryngeal contraction’) of the seizures. The video images were also fully screened for false negatives. In the third part, algorithms in the CLB-monitor detected one specific sound (sleep-related snoring) to illustrate the value of automatic sound recognition. Results Part 1: recognizable sounds (louder than whispering) occurred in 23 (51%) of the 45 major seizures, 20 seizures (45%) were below this threshold, and 2 (4%) were without any sound. Part 2: in the follow-up group (n = 10, 112 major seizures; mean: 11.2, range: 1–30), we found a mean sensitivity of 0.81 (range: 0.33–1.00) and a mean positive predictive value of 0.40 (range: 0.06–1.00). All false positive alarms (mean value: 1.29 per night) were due to minor seizures. We missed 4 seizures (3%) because of lack of sound and 10 (9%) because of sounds below the system threshold. Part 3: the machine-learning algorithms in the CLB-monitor resulted in an overall accuracy for ‘snoring’ of 98.3%. Conclusions Audio detection of major seizures is possible in half of the patients. Lower sound detection thresholds may increase the proportion of suitable candidates. Human selection of seizure-related sounds has a high sensitivity and moderate positive predictive value because of minor seizures which do not need intervention. Algorithms in the CLB-monitor detect seizure-related sounds and may be used alone or in multimodal systems

Diagnostic accuracy of audio-based seizure detection in patients with severe epilepsy and an intellectual disability

We evaluated the performance of audio-based detection of major seizures (tonic–clonic and long generalized tonic) in adult patients with intellectual disability living in an institute for residential care. Methods First, we checked in a random sample (n = 17, 102 major seizures) how many patients have recognizable sounds during these seizures. In the second part of this trial, we followed 10 patients (who had major seizures with recognizable sounds) during four weeks with an acoustic monitoring system developed by CLB (‘CLB-monitor’) and video camera. In week 1, we adapted the sound detection threshold until, per night, a maximum of 20 sounds was found. During weeks 2–4, we selected the epilepsy-related sounds and performed independent video verification and labeling (‘snoring’, ‘laryngeal contraction’) of the seizures. The video images were also fully screened for false negatives. In the third part, algorithms in the CLB-monitor detected one specific sound (sleep-related snoring) to illustrate the value of automatic sound recognition. Results Part 1: recognizable sounds (louder than whispering) occurred in 23 (51%) of the 45 major seizures, 20 seizures (45%) were below this threshold, and 2 (4%) were without any sound. Part 2: in the follow-up group (n = 10, 112 major seizures; mean: 11.2, range: 1–30), we found a mean sensitivity of 0.81 (range: 0.33–1.00) and a mean positive predictive value of 0.40 (range: 0.06–1.00). All false positive alarms (mean value: 1.29 per night) were due to minor seizures. We missed 4 seizures (3%) because of lack of sound and 10 (9%) because of sounds below the system threshold. Part 3: the machine-learning algorithms in the CLB-monitor resulted in an overall accuracy for ‘snoring’ of 98.3%. Conclusions Audio detection of major seizures is possible in half of the patients. Lower sound detection thresholds may increase the proportion of suitable candidates. Human selection of seizure-related sounds has a high sensitivity and moderate positive predictive value because of minor seizures which do not need intervention. Algorithms in the CLB-monitor detect seizure-related sounds and may be used alone or in multimodal systems

Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

status: publishe

Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the two acids, attributed to an anisotropy in step edge reactivity. The morphology of the etch pits in bulk InP suggests that the dislocations are oriented mainly perpendicular to the surface. By studying the influence of the acid concentration on the InP fin recess in nanoscale trenches, it was found that aqueous HCl solution was most suitable for revealing defects. Planar defects in InP fin structures grown by the aspect ratio trapping technique could be visualized as characteristic shallow grooves approximately one nanometer deep. It is challenging to reveal defects in wide-field InP fins. In these structures, dislocations also reach the surface next to stack faults or twinning planes. Due to the inclined nature, dislocation-related pits are only a few atomic layers deep. Extending the pits is limited by the high reactivity of the fin sides and the strong surface roughening during etching. The process window for revealing wet-chemical defects in InP fins is limited

Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry

In this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular the marked difference in etch rate and the contrasting role of chloride in the dissolution of the two semiconductors. A critical factor in determining the surface chemistry is considered to be the ease with which a proton can be removed from the group V hydroxide, which is formed in the initial etching step (the breaking of the III-V surface bond).peerReviewe