Low-loss amorphous silicon waveguides grown by PECVD on indium tin oxide

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Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors

Abstract A new temperature sensor based on a divanadium pentoxide/4H-silicon carbide (V2O5/4H-SiC) Schottky diode is presented. The realized device shows a good linear dependence vs. temperature of the voltage drop measured across the forward-biased junction. The diode performance, i.e. linearity and sensitivity, were analyzed in the temperature range from 147 K up to 400 K. Moreover, fundamental diode parameters were extracted from current-voltage characteristics

ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENTVOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES

ABSTRACTIn this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigatedexperimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performedusing proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and holeminority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved andwell behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrierlifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. Weachieved a good agreement between simulations and measured data. The measured and the simulated forward characteristicsindicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies ofabout 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.KEYWORDS: p-i-n diode, silicon carbide, silvaco, device simulation, lifetimes

V2O5/4H-SiC Schottky diode as a high performance PTAT sensor

A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (divanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence between the voltage differences across two constant-current forward biased diodes on temperature has been used for thermal sensing in the wide temperature range from T=147 K up to 400 K. A sensitivity of 307 μV/K was calculated for two constant bias currents, ID1=16 μA and ID2=608 μA