Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): nucleation and solid solubility of the monosilicides

© 2017 Acta Materialia Inc. The solid solubility of the isomorphous monosilicides during the silicide reaction of Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100) is comparatively studied in the full composition range. Our study reveals that PtSi and PdSi, exhibiting a minor lattice mismatch, directly form a solid solution. In contrast, for larger differences in lattice parameters such as is the case for NiSi-PtSi and NiSi-PdSi, the mutually soluble phases coexist, prior to the formation of a solid solution at increased temperatures. Hence, it appears that the direct formation of a ternary monosilicide solid solution is inherently related to the lattice mismatch of the binary monosilicides. This finding provides an explanation for important differences observed in the elemental redistribution between the three systems, considered to be very similar up to now. Moreover, the different formation of a solid solution results in a fundamentally different nucleation of PdSi: while Ni lowers the nucleation barrier by reducing the contribution of the interface energy, Pt strongly increases the entropy of mixing which triggers the formation of the Pd-monosilicide at surprisingly low temperatures. Our results show that the lattice mismatch is a crucial parameter and determines the phase formation sequence and elemental redistribution during the silicide reaction.publisher: Elsevier articletitle: Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): Nucleation and solid solubility of the monosilicides journaltitle: Acta Materialia articlelink: http://dx.doi.org/10.1016/j.actamat.2017.03.022 content_type: article copyright: © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.status: publishe

Simultaneous real-time x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, and sheet resistance measurements to study thin film growth kinetics by Kissinger plots

When the Kissinger method is used to investigate thin film growth kinetics, activation energies obtained are often significantly higher than those of Arrhenius plots based on isothermal studies. The reason for the higher activation energies is related to the sensitivity of the Kissinger analysis to nucleation effects. In fact, this often undesirable effect opens the possibility of studying nucleation barriers in a semiquantitative way. Furthermore, we show that these nucleation effects can be filtered out by a more careful application of the Kissinger method, and activation energies that are consistent with Arrhenius plots are then obtained.status: publishe

Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time

The growth kinetics of ternary Co1-xNixSi2 thin films was studied in real time. The "Kissinger" method was applied to the results of ramped sheet resistance measurements to extract the apparent activation energy for the growth process. By simultaneously acquiring sheet resistance, x-ray diffraction and laser light scattering data on one hand and combining resistance measurements and Rutherford backscattering spectrometry on the other hand, we could distinguish between the initial, nucleation controlled thin film growth, and the subsequent diffusion controlled growth. The apparent activation energy for the initial growth decreases with increasing Ni concentration as a result of a lower nucleation barrier for the ternary disilicide. The markedly different microstructure of the ternary Co1-xNixSi2 films with respect to pure CoSi2 layers lies at the origin of a lower activation energy for the diffusion controlled growth of the ternary films. Despite the low activation energy, these films grow at a much slower rate than CoSi2 films due to the large grain size and consequently lower density of grain boundary diffusion paths. These results explain the unexpected high thermal budget required for the formation of low resistivity Co1-xNixSi2 thin films. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3013449]status: publishe

Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH 3

Titanium nitride (TiN) shows metallic-type electrical behavior and is therefore an interesting material to improve the conductivity of a wide variety of powders. Atomic layer deposition (ALD) is an excellent technique for achieving the desired ultrathin but conformal coatings. To conformally coat large amounts of particles using ALD, agitation of the particles and efficient reactant usage are necessary. Thermal and plasma-enhanced ALD growth of TiN using tetrakis(dimethylamino) titanium (TDMAT) and NH3 as precursors on agitated particles was performed using a rotary reactor to deposit TiN on ZnO submicrometer powder. The NH3 plasma pulse was monitored using in situ mass spectrometry (MS) and optical emission spectroscopy (OES) measurements to gain insight into the reaction mechanism of the plasma-enhanced process. X-ray photoelectron spectroscopy (XPS) and powder resistivity measurements were performed to determine the influence of the deposition process on the composition and conductivity of the deposited TiN layers

Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices

[[abstract]]One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi2, which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.[[notice]]補正完畢[[journaltype]]國外[[booktype]]紙本[[countrycodes]]US