Pulsed Direct liquid Injection ALD of TiO2 Films Using Titanium Tetraisopropoxide Precursor

AbstractTiO2 thin films are grown by pulsed direct liquid injection atomic layer deposition with rapid thermal heating using titanium tetraisopropoxide and water vapor as precursors. The ALD growth rate is constant in the saturation zone range 35-47ms at the temperature deposition of 280°C. The TiO2 growth rate of 0.018nm/cycle was achieved in a self-limited ALD mode. SEM and AFM analysis showed the as-deposited films have a smooth surface with a low roughness. XPS analysis exhibited the stoichiometry of TiO2 in the homogenous depth composition

Growth of low doped monolayer graphene on SiC(0001) viasublimation at low argon pressure

Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600°C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700°C). The spatial homogeneity of the monolayer graphene was observed at 1750°C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an AG-graphene/AG-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements fromroom temperature down to 1.7 K indicated slightly p-doped samples (p~10^10cm-2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films

Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximité

International audienc

Electrical characterisation of HfO2 films obtained by UV assisted injection MOCVD

International audienc