10 research outputs found
Strong transient magnetic fields induced by THz-driven plasmons in graphene disks
Strong circularly polarized excitation opens up the possibility to generate
and control effective magnetic fields in solid state systems, e.g., via the
optical inverse Faraday effect or the phonon inverse Faraday effect. While
these effects rely on material properties that can be tailored only to a
limited degree, plasmonic resonances can be fully controlled by choosing proper
dimensions and carrier concentrations. Plasmon resonances provide new degrees
of freedom that can be used to tune or enhance the light-induced magnetic field
in engineered metamaterials. Here we employ graphene disks to demonstrate
light-induced transient magnetic fields from a plasmonic circular current with
extremely high efficiency. The effective magnetic field at the plasmon
resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong
(~1{\deg}) ultrafast Faraday rotation (~ 20 ps). In accordance with reference
measurements and simulations, we estimated the strength of the induced magnetic
field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ
cm-2
Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)
Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001)
(Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped,
relatively stable in ambient conditions). However, intercalation of Mg
underneath monolayer graphene is challenging, requiring multiple intercalation
steps. Here, we overcome these challenges and subsequently increase the rate of
Mg intercalation by laser patterning (ablating) the graphene to form
micron-sized discontinuities. We then use low energy electron diffraction to
verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron
spectroscopy to determine the Mg intercalation rate for patterned and
non-patterned samples. By modeling Mg intercalation with the Verhulst equation,
we find that the intercalation rate increase for the patterned sample is
4.51.7. Since the edge length of the patterned sample is 5.2
times that of the non-patterned sample, the model implies that the increased
intercalation rate is proportional to the increase in edge length. Moreover, Mg
intercalation likely begins at graphene discontinuities in pristine samples
(not step edges or flat terraces), where the 2D-like crystal growth of
Mg-silicide proceeds. Our laser patterning technique may enable the rapid
intercalation of other atomic or molecular species, thereby expanding upon the
library of intercalants used to modify the characteristics of graphene, or
other 2D materials and heterostructures.Comment: 24 pages, 4 figure
Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied
extensively, yet precisely where the Ca resides remains elusive. Furthermore,
the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been
reported. Here, we use low energy electron diffraction, x-ray photoelectron
spectroscopy, secondary electron cut-off photoemission and scanning tunneling
microscopy to elucidate the physical and electronic structure of both Ca- and
Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca
intercalates underneath the buffer layer and bonds to the Si-terminated SiC
surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the
buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene
(Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial
graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC
surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in
Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG).
Ca-intercalation underneath the buffer layer has not been considered in
previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no
evidence that either Ca or Mg intercalates between graphene layers. However, we
do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of
3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to
ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG
remains remarkably stable.Comment: 58 pages, 10 figures, 4 tables. Revised text and figure
Manipulating Surface Energy to form Compound Semiconductor Nanostructures
Nanostructures have been lauded for their quantum confinement capabilities and potential applications in future devices. Compound semiconductor nanostructures are being integrated into the next generation of photovoltaic and light emitting devices to take advantage of their unique optical characteristics. Despite their promise, adoption of nanostructure based devices has been slow. This is due in large part to difficulties in effective fabrication and processing steps. By manipulating the surface energy of various components during growth, we can control the final structure and corresponding optoelectronic characteristics. Specifically I will present on GaSb quantum dots embedded in GaAs and GaAs nanowires using novel substrate and catalyst materials.
GaSb quantum dots embedded in a GaAs matrix are ideal for devices that require capture of minority carriers as they exhibit a type II band offset with carrier concentration in the valence band. However, during GaAs capping, there is a strong driving force for the dot to demolish into a distribution of intact dots, rings, and GaSb material clusters. We demonstrate the ability to mitigate this effect using both chemical and kinetic means: we alter the surface chemistry via the addition of aluminum, and use droplet epitaxy as an alternative quantum dot formation method. Secondly, the growth of high quality GaAs on silicon has always been restricted due to material incompatibilities. With the emergence of increasingly smaller low power electronics, there is a demand to integrate optoelectronic devices directly on the surface of CMOS sensor stacks. Utilizing the vapor-liquid-solid growth mechanism we are able to demonstrate the growth of high quality GaAs nanowires on polycrystalline substrates at low temperatures. This allows for the growth of III-V nanowire based devices directly on the metal pads of pre-packaged CMOS chips. We also investigate the potential use of bismuth as an alternative to gold for catalyzing nanowire growth.PHDMaterials Science and EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135758/1/mdejarld_1.pd
Observation of strong magneto plasmonic nonlinearity in bilayer graphene discs
Chin ML, Matschy S, Stawitzki F, et al. Observation of strong magneto plasmonic nonlinearity in bilayer graphene discs. Journal of Physics: Photonics. 2021;3(1): 01LT01.Graphene patterned into plasmonic structures like ribbons or discs strongly increases the linear and nonlinear optical interaction at resonance. The nonlinear optical response is governed by hot carriers, leading to a red-shift of the plasmon frequency. In magnetic fields, the plasmon hybridizes with the cyclotron resonance, resulting in a splitting of the plasmonic absorption into two branches. Here we present how this splitting can be exploited to tune the nonlinear optical response of graphene discs. In the absence of a magnetic field, a strong pump-induced increase in on-resonant transmission can be observed, but fields in the range of 3 T can change the characteristics completely, leading to an inverted nonlinearity. A two temperature model is provided that describes the observed behavior well
Plasmonic terahertz nonlinearity in graphene disks
"Analysis_code_Final" contains the theoretical calculations. "FELmeasurements" contains the raw data of the pump-probe measurements with the FEL. "LabBook" contains the corresponding lab book pages
Plasmonic Terahertz Nonlinearity in Graphene Disks
Han JW, Chin ML, Matschy S, et al. Plasmonic Terahertz Nonlinearity in Graphene Disks. Advanced Photonics Research. 2022;3(2)