453 research outputs found
Advancing the performance of one-dimensional photonic crystal/photonic wire micro-cavities in silicon-on-insulator
We present new results that demonstrate advances in the performance achievable in photonic crystal/photonic wire micro-cavities. In one example, a quality-factor value as high as 147,000 has been achieved experimentally at a useful transmission level
Design and fabrication of high quality-factor 1-d photonic crystal/photonic wire extended microcavities
We have successfully demonstrated experimentally the fabrication and measurement of high quality-factor one-dimensional photonic crystal/photonic wire extended cavities based on silicon-on-insulator. The cavities that we have investigated ranged from 3 to 8 m in length. A quality-factor of nearly 74 000 was measured at a cavity length of 5 m through the use of tapering both within and outside the cavity, showing good agreement with the finite-difference time-domain simulation approach use
Growth rate for the expected value of a generalized random Fibonacci sequence
A random Fibonacci sequence is defined by the relation g_n = | g_{n-1} +/-
g_{n-2} |, where the +/- sign is chosen by tossing a balanced coin for each n.
We generalize these sequences to the case when the coin is unbalanced (denoting
by p the probability of a +), and the recurrence relation is of the form g_n =
|\lambda g_{n-1} +/- g_{n-2} |. When \lambda >=2 and 0 < p <= 1, we prove that
the expected value of g_n grows exponentially fast. When \lambda = \lambda_k =
2 cos(\pi/k) for some fixed integer k>2, we show that the expected value of g_n
grows exponentially fast for p>(2-\lambda_k)/4 and give an algebraic expression
for the growth rate. The involved methods extend (and correct) those introduced
in a previous paper by the second author
Tapered photonic crystal microcavities embedded in photonic wire waveguides with large resonance quality-factor and high transmission
We present the design, fabrication, and characterization of a microcavity that exhibits simultaneously high transmission and large resonance quality-factor (Q-factor). This microcavity is formed by a single-row photonic crystal (PhC) embedded in a 500-nm-wide photonic wire waveguide - and is based on silicon-on-insulator. A normalized transmission of 85%, together with a Q-factor of 18 500, have been achieved experimentally through the use of carefully designed tapering on both sides of each of the hole-type PhC mirrors that form the microcavity. We have also demonstrated reasonably accurate control of the cavity resonance frequency. Simulation of the device using a three-dimensional finite-difference time-domain approach shows good agreement with the experimental results
State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths
Silicon-based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption - due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well-established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state-of-the-art is presented. Devices based on defect-mediated absorption, two-photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared
AFM imaging and plasmonic detection of organic thin-films deposited on nanoantenna arrays
In this study, atomic force microscopy (AFM) imaging has been used to reveal the preferential deposition of organic thin-films on patterned nanoantenna array surfaces - identifying the localised formation of both monolayer and multilayer films of octadecanethiol (ODT) molecules, depending on the concentration of the solutions used. Reliable identification of this selective deposition process has been demonstrated for the first time, to our knowledge. Organic thin-films, in particular films of ODT molecules, were deposited on plasmonic resonator surfaces through a chemi-sorption process - using different solution concentrations and immersion times. The nanoantennas based on gold asymmetric-split ring resonator (A-SRR) geometries were fabricated on zinc selenide (ZnSe) substrates using electron-beam lithography and the lift-off technique. Use of the plasmonic resonant-coupling technique has enabled the detection of ODT molecules deposited from a dilute, micromolar (1 M) solution concentration - with attomole sensitivity of deposited material per A-SRR – a value that is three orders of magnitude lower in concentration than previously reported. Additionally, on resonance, the amplitude of the molecular vibrational resonance peaks is typically an order of magnitude larger than that for the non-resonant coupling. Fourier-transform infrared (FTIR) spectroscopy shows molecule specific spectral responses – with magnitudes corresponding to the different film thicknesses deposited on the resonator surfaces. The experimental results are supported by numerical simulation
Deposition of Organic Molecules on Gold Nanoantennas for Sensing
The deposition of organic molecules on gold nanoantennas is reported through chemisorption for sensing in the midinfrared (mid-IR) spectral range. The specific nanostructures are gold asymmetric-split ring resonators (A-SRRs) based on circular-geometry with two different ‘arc’ lengths. The plasmonic resonant coupling technique was used to match the vibrational responses of the targeted molecules for their enhanced detection. Gold nanostructures are functionalised through chemisorption of octadecanethiol (ODT) in ethanol solution. The molecular vibrational responses were measured using a microscope coupled Fourier Transform Infrared (FTIR) spectroscopy. The experimental findings are closely supported using FDTD simulation. The modified nanoantennas surfaces are capable of supporting wide range of organic-sensing applications
Proteins Involved in the Trafficking and Functional Synaptic Expression of AMPA and KA Receptors
α-Amino-3-hydroxy-5-methylisoxazolepropionate receptors (AMPARs) mediate the majority of fast synaptic transmission in the mammalian central nervous system, play a central role in synapse stabilisation and plasticity, and their prolonged activation is potently neurotoxic. The functional roles of kainate receptors (KARs) are less well defined but they play a role in some forms of synaptic plasticity. Both receptor types have been shown to be highly developmentally and activity-dependently regulated and their functional synaptic expression is under tight cellular regulation. The molecular and cellular mechanisms that regulate the synaptic localisation and functional expression of AMPARs and KARs are objects of concerted research. There has been significant progress towards elucidating some of the processes involved with the discovery of an array of proteins that selectively interact with individual AMPAR and KAR subunits. These proteins have been implicated in, among other things, the regulation of post-translational modification, targeting and trafficking, surface expression, and anchoring. The aim of this review is to present an overview of the major interacting proteins and suggest how they may fit into the hierarchical series of events controlling the trafficking of AMPARs and KARs
Photonic microstructures as laser mirrors
Deeply etched 1-D third-order Bragg reflectors have been used as mirrors for broad-area semiconductor lasers operating at 975-nm wavelength. From a threshold and efficiency analysis, we determine the mirror reflectivity to be approximately 95%. The design of the GaAs-based laser structure features three InGaAs quantum wells placed close (0.5 μm) to the surface in order to reduce the required etch depth and facilitate high-quality etching. Despite the shallow design and the proximity of the guided mode to the metal contact, the threshold current density (J_(th) = 220 A/cm^2 for infinite cavity length) and internal loss (α_i = 9±1 cm^(−1)) are very low
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