Room-Temperature Anomalous Hall Effect in Graphene in Interfacial Magnetic Proximity with EuO Grown by Topotactic Reduction

We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO smooth layer, without noticeable structural changes in the underlying chemical vapor deposited (CVD) graphene. The obtained EuO films exhibit ferromagnetism, with a Curie temperature that decreases with the initially deposited Eu2O3 layer thickness. By adjusting the thickness of the Eu2O3 layer below 7 nm, we promote the formation of EuO at the very graphene interface: the EuO/graphene heterostructure demonstrates the anomalous Hall effect (AHE), which is a fingerprint of proximity-induced spin polarization in graphene. The AHE signal moreover persists above Tc up to 350K due to a robust super-paramagnetic phase in EuO. This original high-temperature magnetic phase is attributed to magnetic polarons in EuO: we propose that the high strain in our EuO films grown on graphene stabilizes the magnetic polarons up to room temperature. This effect is different from the case of bulk EuO in which polarons vanish in the vicinity of the Curie temperature Tc= 69K.Comment: 29 page

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.Comment: 23 pages, 5 figures; Supporting Information: 12 pages, 6 figure

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric {\alpha}-In2_{2}Se3_{3}

Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, {\alpha}-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H \alpha-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type doping further supports the quantum confinement of electrons and the formation of the 2DEG.Comment: 20 pages, 12 figure

Bacterial infection profiles in lung cancer patients with febrile neutropenia

<p>Abstract</p> <p>Background</p> <p>The chemotherapy used to treat lung cancer causes febrile neutropenia in 10 to 40% of patients. Although most episodes are of undetermined origin, an infectious etiology can be suspected in 30% of cases. In view of the scarcity of data on lung cancer patients with febrile neutropenia, we performed a retrospective study of the microbiological characteristics of cases recorded in three medical centers in the Picardy region of northern France.</p> <p>Methods</p> <p>We analyzed the medical records of lung cancer patients with neutropenia (neutrophil count < 500/mm³) and fever (temperature > 38.3°C).</p> <p>Results</p> <p>The study included 87 lung cancer patients with febrile neutropenia (mean age: 64.2). Two thirds of the patients had metastases and half had poor performance status. Thirty-three of the 87 cases were microbiologically documented. Gram-negative bacteria (mainly enterobacteriaceae from the urinary and digestive tracts) were identified in 59% of these cases. <it>Staphylococcus </it>species (mainly <it>S. aureus</it>) accounted for a high proportion of the identified Gram-positive bacteria. Bacteremia accounted for 60% of the microbiologically documented cases of fever. 23% of the blood cultures were positive. 14% of the infections were probably hospital-acquired and 14% were caused by multidrug-resistant strains. The overall mortality rate at day 30 was 33% and the infection-related mortality rate was 16.1%. Treatment with antibiotics was successful in 82.8% of cases. In a multivariate analysis, predictive factors for treatment failure were age >60 and thrombocytopenia < 20000/mm³.</p> <p>Conclusion</p> <p>Gram-negative species were the most frequently identified bacteria in lung cancer patients with febrile neutropenia. Despite the success of antibiotic treatment and a low-risk neutropenic patient group, mortality is high in this particular population.</p

Nanoplatelets Bridging a Nanotrench: A New Architecture for Photodetectors with Increased Sensitivity

International audienceInterparticle charge hopping severely limits the integration of colloidal nanocrystals films for optoelectronic device applications. We propose here to overcome this problem by using high aspect ratio interconnects made of wide electrodes separated by a few tens of namometers, a distance matching the size of a single nanoplatelet. The semiconducting CdSe/CdS nanoplatelet coupling with such electrodes allows an efficient electron–hole pair dissociation despite the large binding energy of the exciton, resulting in optimal photoconductance responsivity. We report the highest responsivity obtained so far for CdSe colloidal material with values reaching kA·W–1, corresponding to eight decades of enhancement compared to usual micrometer-scaled architectures. In addition, a decrease of 1 order of magnitude of the current noise is observed, revealing the reduced influence of the surface traps on transport. The nanotrench geometry provides top access to ion gel electrolyte gating, allowing for a photoresponsive transistor with 104 on/off ratio. A simple analytical model reproduces the device behavior and underlines the key parameters related to its performance

Phototransport in colloidal nanoplatelets array

International audienceColloidal nanocrystals are promising materials for achieving low cost optoelectronic devices. In this paper, we focus on the transport and photo transport properties of 2D nanoplatelet thin films and their use for photodetection. We present evidence that improved performances relies on good trap passivation as well as overcoming the inherent large exciton binding energy of the 2D NPL. This can be achieved using a phototransistor configuration with transport at the single particle scal

Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors

International audienceInterface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities in the search for alternative device architectures toward overcoming the von Neumann bottleneck. However, their implementation is still in its infancy, mostly by electrical control. It is of utmost interest to develop strategies for additional optical and multistate control in the quest for novel neuromorphic architectures. Here, we demonstrate the non-volatile electrical and optical control of the ferroelectric polarization states of Ferroelectric Field Effect Transistors (FeFET). The FeFETs, fully made of ReS 2 /hBN/CuInP 2 S 6 van der Waals materials, achieve an On/Off ratio exceeding 10 7 , a hysteresis memory window up to 7 V wide, and multiple remanent states with a lifetime exceeding 10 3 s. Moreover the ferroelectric polarization of the CuInP 2 S 6 (CIPS) layer can be controlled by photo-exciting the vdW heterostructure. We perform wavelength-dependent studies which allow for identifying two mechanisms at play in the optical control of the polarization: band-toband photocarrier generation into the 2D semiconductor ReS 2 , and photovoltaic voltage into the 2D ferroelectric CIPS. Finally, heterosynaptic plasticity is demonstrated by operating our FeFET in three different synaptic modes: electrically stimulated, optically stimulated, and optically assisted synapse. Key synaptic functionalities are emulated including electrical long-term plasticity, optoelectrical plasticity, optical potentiation, and spike rate-dependent plasticity. The simulated artificial neural networks demonstrate an excellent accuracy level of 91% close to ideal-model synapses. These results provide a fresh background for future research on photo-ferroelectric van der Waals systems, and put ferroelectric vdW heterostructures on the roadmap for next neuromorphic computing architectures

Room temperature optoelectronic devices operating with spin crossover nanoparticles

International audienceMolecular systems can exhibit multi-stimuli switching of their properties, with spin crossover materials having unique magnetic transition triggered by temperature and light, among others. Light-induced room temperature operation is however elusive, as optical changes between metastable spin states require cryogenic temperatures. Furthermore, electrical detection is hampered by the intrinsic low conductivity properties of these materials. We show here how a graphene underlayer reveals the light-induced heating that triggers a spin transition, paving the way for using these molecules for room temperature optoelectronic applications

Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays

International audienceNarrow band gap nanocrystals offer an interesting platform for alternative design of low-cost infrared sensors. It has been demonstrated that transport in HgTe nanocrystal arrays occurs between strongly-coupled islands of nanocrystals in which charges are partly delocalized. This, combined with the scaling of the noise with the active volume of the film, make case for device size reduction. Here, with two steps of optical lithography we design a nanotrench which effective channel length corresponds to 5-10 nanocrystals, matching the carrier diffusion length. We demonstrate responsivity as high as 1 kA W −1 , which is 10 5 times higher than for conventional µm-scale channel length. In this work the associated specific detectivity exceeds 10 12 Jones for 2.5 µm peak detection under 1 V at 200 K and 1 kHz, while the time response is as short as 20 µs, making this performance the highest reported for HgTe NC-based extended shortwave infrared detection