GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications

This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance. Enhancement in short circuit current gain (fT) and maximum frequency of oscillation (fMAX) was observed in the HEMT with a 1 nm AlN spacer, where (fT) and (fMAX) were increased from 47 GHz to 55 GHz and 79 GHz to 121 GHz, respectively. Small-signal-modelling analysis was carried out to study this improvement in performance. We found that the AlN interlayer played a crucial role in reducing the gate-source capacitance, Cgs, by 36 % and delay, τ, by 20 % under the gate, as a result of an increase in mobility and a reduction in trap-related effects

Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application

AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on Si substrate are emerging as an attractive devices for many RF applications. This is due to lower circuits realization cost and multifunction chips integration. In this study we investigate the effect of AlN spacer between AlGaN and GaN of a sub-micron gate (0.3 μm) AlGaN/GaN and AlGaN/AlN/GaN HEMTs on a Low Resistivity LR Si substrates on RF performance. We have observed an enhancement in RF performance fT and fMAX in the HEMT with of AlN spacer; (fT) was increased from 47 GHz to 55 GHz and (fMAX) was increased from 79 GHz to 121 GHz. This enhancement in performance is mainly due to the increase in the mobility in the channel and confinement of the carriers reducing Cgs, and delay τ under the gate. We believe this is the first RF study of this type as previous studies were based on the effects of the DC characteristic of the devices [1]

Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)

In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-μm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding any substrate coupling effects. An insertion loss of less than 3 dB/mm was achieved for frequencies up to 750 GHz. To prove the effectiveness of the technology, a variety of test structures, passive components and antennas have been design, fabricated and characterized. High Q performance was demonstrated making such technology a strong candidate for future THz-MIC technology for many applications such as radar, communications, imaging and sensing

Yersinia ruckeri isolates recovered from diseased Atlantic Salmon (Salmo salar) in Scotland are more diverse than those from Rainbow Trout (Oncorhynchus mykiss) and represent distinct subpopulations

Yersinia ruckeri is the etiological agent of enteric redmouth (ERM) disease of farmed salmonids. Enteric redmouth disease is traditionally associated with rainbow trout (Oncorhynchus mykiss, Walbaum), but its incidence in Atlantic salmon (Salmo salar) is increasing. Yersinia ruckeri isolates recovered from diseased Atlantic salmon have been poorly characterized, and very little is known about the relationship of the isolates associated with these two species. Phenotypic approaches were used to characterize 109 Y. ruckeri isolates recovered over a 14-year period from infected Atlantic salmon in Scotland; 26 isolates from infected rainbow trout were also characterized. Biotyping, serotyping, and comparison of outer membrane protein profiles identified 19 Y. ruckeri clones associated with Atlantic salmon but only five associated with rainbow trout; none of the Atlantic salmon clones occurred in rainbow trout and vice versa. These findings suggest that distinct subpopulations of Y. ruckeri are associated with each species. A new O serotype (designated O8) was identified in 56 biotype 1 Atlantic salmon isolates and was the most common serotype identified from 2006 to 2011 and in 2014, suggesting an increased prevalence during the time period sampled. Rainbow trout isolates were represented almost exclusively by the same biotype 2, serotype O1 clone that has been responsible for the majority of ERM outbreaks in this species within the United Kingdom since the 1980s. However, the identification of two biotype 2, serotype O8 isolates in rainbow trout suggests that vaccines containing serotypes O1 and O8 should be evaluated in both rainbow trout and Atlantic salmon for application in Scotland

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks

In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm. Devices with Pt and Ni based gates were studied and their leakage characteristics are compared. Maximum drain current IDS of 1 A/mm, maximum extrinsic transconductance gm ~203 mS/mm and on-resistance Ron 4.07 Ω mm for gate to drain distance LGD = 4 μm were achieved. Nearly ideal sub-threshold swing of 65.6 mV/dec was obtained for LGD = 14 μm. The use of Pt based gate metal stacks led to a two to three orders of magnitude gate leakage current decrease compared to Ni based gates. The influence of InAlN layer thickness on the transistor transfer characteristics is also discussed

Quantifying geometrically necessary dislocations in quartz using HR-EBSD: Application to chessboard subgrain boundaries

This study presents the first use of high-angular resolution electron backscatter diffraction (HR-EBSD) to quantitatively characterise geometrically necessary dislocations in quartz subgrain structures. HR-EBSD exploits cross-correlation of diffraction patterns to measure intragranular misorientations with precision on the order of 0.01° with well-constrained misorientation axes. We investigate the dislocation structures of chessboard subgrains in quartz within samples from the Greater Himalayan Sequence, Nepal. Our results demonstrate that chessboard subgrains are formed primarily from two sets of subgrain boundaries. One set consists primarily of {m}[c] edge dislocations, the other consists primarily of dislocations with Burgers vectors. Apparent densities of geometrically necessary dislocations vary from > 10^13 m−2 within some subgrain boundaries to < 10^12 m−2 within subgrain interiors. The results suggest that at pressures above approximately 10 kbar, chessboard subgrains may form within the α-quartz stability field. Most importantly, this study demonstrates the potential of HR-EBSD as an improved method for analysis of intragranular microstructures in quartz that are used as indicators of deformation conditions.D. Wallis and L.N. Hansen acknowledge support from the Natural Environment Research Council Grant NE/M000966/1. A.J. Parsons acknowledges support from the Natural Environment Research Council (training grant NE/J50001X/1)

Host adapted serotypes of <i>Salmonella enterica</i>

Salmonella constitutes a genus of zoonotic bacteria of worldwide economic and health importance. The current view of salmonella taxonomy assigns the members of this genus to two species: S. enterica and S. bongori. S. enterica itself is divided into six subspecies, enterica, salamae, arizonae, diarizonae, indica, and houtenae, also known as subspecies I, II, IIIa, IIIb, IV, and VI, respectively. Members of Salmonella enterica subspecies enterica are mainly associated with warm-blooded vertebrates and are usually transmitted by ingestion of food or water contaminated by infected faeces. The pathogenicity of most of the distinct serotypes remains undefined, and even within the most common serotypes, many questions remain to be answered regarding the interactions between the organism and the infected host. Salmonellosis manifests itself in three major forms: enteritis, septicaemia, and abortion, each of which may be present singly or in combination, depending on both the serotype and the host involved. Although currently over 2300 serovars of Salmonella are recognized, only about 50 serotypes are isolated in any significant numbers as human or animal pathogens and they all belong to subspecies enterica. Of these, most cause acute gastroenteritis characterized by a short incubation period and a severe systemic disease in man or animals, characterized by septicaemia, fever and/or abortion, and such serotypes are often associated with one or few host species. It is the intention of this review to present a summary of current knowledge of these host-adapted serotypes of S. enterica. The taxonomic relationships between the serotypes will be discussed together with a comparison of the pathology and pathogenesis of the disease that they cause in their natural host(s). Since much of our knowledge on salmonellosis is based on the results of work on Typhimurium, this serotype will often be used as the baseline in discussion. It is hoped that an appreciation of the differences that exist in the way these serotypes interact with the host will lead to a greater understanding of the complex host–parasite relationship that characterizes salmonella infections

Contextual modulation involves suppression and facilitation from the center and the surround

In psychophysics, cross-orientation suppression (XOS) and cross-orientation facilitation (XOF) have been measured by investigating mask configuration on the detection threshold of a centrally placed patch of sine-wave grating. Much of the evidence for XOS and XOF comes from studies using low and high spatial frequencies, respectively, where the interactions are thought to arise from within (XOS) and outside (XOF) the footprint of the classical receptive field. We address the relation between these processes here by measuring the effects of various sizes of superimposed and annular cross-oriented masks on detection thresholds at two spatial scales (1 and 7 c/deg) and on contrast increment thresholds at 7 c/deg. A functional model of our results indicates the following (1) XOS and XOF both occur for superimposed and annular masks. (2) XOS declines with spatial frequency but XOF does not. (3) The spatial extent of the interactions does not scale with spatial frequency, meaning that surround-effects are seen primarily at high spatial frequencies. (4) There are two distinct processes involved in XOS: direct divisive suppression and modulation of self-suppression. (5) Whether XOS or XOF wins out depends upon their relative weights and mask contrast. These results prompt enquiry into the effect of spatial frequency at the single-cell level and place new constraints on image-processing models of early visual processing. © ARVO

Dislocation interactions in olivine control postseismic creep of the upper mantle.

Changes in stress applied to mantle rocks, such as those imposed by earthquakes, commonly induce a period of transient creep, which is often modelled based on stress transfer among slip systems due to grain interactions. However, recent experiments have demonstrated that the accumulation of stresses among dislocations is the dominant cause of strain hardening in olivine at temperatures ≤600 °C, raising the question of whether the same process contributes to transient creep at higher temperatures. Here, we demonstrate that olivine samples deformed at 25 °C or 1150-1250 °C both preserve stress heterogeneities of ~1 GPa that are imparted by dislocations and have correlation lengths of ~1 μm. The similar stress distributions formed at these different temperatures indicate that accumulation of stresses among dislocations also provides a contribution to transient creep at high temperatures. The results motivate a new generation of models that capture these intragranular processes and may refine predictions of evolving mantle viscosity over the earthquake cycle

Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application

AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on Si substrate are emerging as an attractive devices for many RF applications. This is due to lower circuits realization cost and multifunction chips integration. In this study we investigate the effect of AlN spacer between AlGaN and GaN of a sub-micron gate (0.3 μm) AlGaN/GaN and AlGaN/AlN/GaN HEMTs on a Low Resistivity LR Si substrates on RF performance. We have observed an enhancement in RF performance fT and fMAX in the HEMT with of AlN spacer; (fT) was increased from 47 GHz to 55 GHz and (fMAX) was increased from 79 GHz to 121 GHz. This enhancement in performance is mainly due to the increase in the mobility in the channel and confinement of the carriers reducing Cgs, and delay τ under the gate. We believe this is the first RF study of this type as previous studies were based on the effects of the DC characteristic of the devices [1]