Thermal stability of color centers in LiF crystals: dependence on radiation type and dose

Accumulation of radiation defects at irradiation is the complex result of consecutive and mutually independent events: formation of primary pair, spatial separation of its components and their transformation into stable ones under experimental conditions [1]..

Thermal stability of color centers in LiF crystals: dependence on radiation type and dose

Accumulation of radiation defects at irradiation is the complex result of consecutive and mutually independent events: formation of primary pair, spatial separation of its components and their transformation into stable ones under experimental conditions [1]..

SURFACE MORTHOLOGY AND OPTICAL PROPERTIES OF SiO2/Si SYSTEM PRECIPITATED TIN

SiO2/Si samples were irradiated with 131Xe ions using an ion cyclotron accelerator DC-60 at Astana, Kazakhstan. We have reported results on SnO nanoclusters deposition into SiO2por/Si structures. Afterwards, nanoporous channels were fulfilled with Sn using chemical deposition techniques. Morphology of synthesized Si/SiO2/Sn system was investigated using scanning electron microscopy

Ab-initio calculations of CO2 adsorption on nonpolar (100) ZnO surface

In this paper, the ab-initio calculations of the CO2 molecule adsorption on the nonpolar ZnO surface were carried out in order to find the equilibrium configuration of the adsorbed molecule, as well as we studied the effect of impurity concentration and the presence of native point defects onto binding energy of molecule. Also, the potential for-mation of a new molecular complex is considered. All results were compared with known experimental data

Luminescence of LiF crystals doped with uranium

The work presents the results of the study of the luminescence of uranium doped LiF crystals. Introduction of the dopant (U) and the co-dopant (OH) shows the occurrence of additional absorption in the range of 260–320 nm. The IR spectrum in crystals containing OH has distinguished characteristic absorption bands at 3725 cm{-1}. In crystals doped with (U), the bands 3550–3580 cm{-1} are observed, which are responsible for OH ions. The doped crystals with co-dopant contain an additional band at 3342 cm?1. The luminescence is observed in the 470–520 nm spectral range excited by ionizing and UV radiation

Photoluminescence of ZnWO4 Crystals Irradiated with 19.2 MeV Carbon Ions

ZnWO4 single crystals were irradiated with carbon ions with an energy of 19.2 MeV with different fluences. The path length of a carbon ion in a single crystal was R = 10 μm. The luminescence light yield decreases exponentially with fluence.This research has been funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP13068155)

CATHODO- AND THERMOLUMINESCENCE OF α-Al2O3 SINGLE CRYSTALS IRRADIATED WITH Fe10+ PULSED ION BEAM

PCL and TL of α-Al2O3 single crystals irradiated with various doses of Fe10+ pulsed ion beam were studied. The formation of F-type centers in irradiated crystals was observed. A similar nonmonotonic dependence of PCL of F-centers and TL on the value of the radiation dose was found

Modeling of defect accumulation in lithium fluoride crystals under irradiation with swift ions

In many materials electronic excitations created around the trajectories of swift ions result in defect creation. Experimental observations often yield information on integral damage effects. The presented approach suggests a theoretical model to correlate integral damage results with microscopic effect produced by overlapping of individual single ion tracks. The model is applied to ion-beam induced defects in LiF crystals. Two aspects are treated separately viz. the ion-deposited energy distribution for a given fluence and the material response to the absorbed energy. The first problem is treated within the framework of stochastic superposition of ion tracks, taking into account the radial distribution of the energy transfer of a single ion. For lithium fluoride the creation of color centers is considered as the materials response. The dependence of the defect concentration on the absorbed energy is included in order to obtain the integral defect production