Impacts of Economic Development on the Awareness of Cultural Preservation of Ethnic Minority People in the Border Region of Northern Vietnam

Purpose: The aim of this study is to examine how the Vietnamese government's economic development strategies affect ethnic minority people's knowledge of cultural preservation in the border area of Northern Vietnam.   Theoretical framework: The study focuses on three main driven factors of the awareness of cultural preservation that are economic changes, societal changes, and environmental changes from three economic fields: agriculture, industry, and trade and services.   Design/methodology/approach: The research sample was taken from ethnic minorities in Northern Vietnam's border area. For questionnaire administration, interviewees are selected at random from the population. Face-to-face, drop-off, and phone-calling approaches were used to disseminate the questionnaire. We received 544 completed returns out of 725 surveys sent out. The data was then cleaned and analyzed with SPSS 20 software using Partial Least Squares Structural Equation Modelling (PLS-SEM).   Findings: The results of a study of ethnic minority communities in seven provinces in Northern Vietnam's border region show that the development of agriculture, industry, trade and service significantly impacts ethnic minority people's awareness of cultural preservation issues due to environmental changes. In contrast, economic and sociological developments appear to have little influence on ethnic minority people's attention to cultural preservation. This phenomenon may be due to the long-term effects of economic and sociological changes, which mostly affect intangible cultural heritages. In contrast, environmental impats are felt swiftly and primarily on physical cultural heritages that can be seen.   Research, Practical & Social implications: The findings of the research provide policymakers with valuable insights on the effects of economic development on cultural preservation. The study's recommendations can inform policies that promote sustainable economic development while preserving the cultural heritage of ethnic minority communities.   Originality/value: The research focuses on the border region of Northern Vietnam, which is an area of strategic importance for economic development and cultural preservation. The study's unique focus on this region provides insights into the cultural and economic dynamics of a specific area that has not been extensively studied

Advances in Rational Design and Materials of High Performance Stretchable Electromechanical Sensors

Stretchable and wearable sensor technology has attracted significant interests and created high technological impact on portable healthcare and smart human–machine interfaces. Wearable electromechanical systems are an important part of this technology that has recently witnessed tremendous progress toward high‐performance devices for commercialization. Over the past few years, great attention has been paid to simultaneously enhance the sensitivity and stretchability of the electromechanical sensors toward high sensitivity, ultra‐stretchability, low power consumption or self‐power functionalities, miniaturisation as well as simplicity in design and fabrication. This work presents state‐of‐the‐art advanced materials and rational designs of electromechanical sensors for wearable applications. Advances in various sensing concepts and structural designs for intrinsic stretchable conductive materials as well as advanced rational platforms are discussed. In addition, the practical applications and challenges in the development of stretchable electromechanical sensors are briefly mentioned and highlighted

Carbon nanotube four-terminal devices for pressure sensing applications

Carbon nanotubes (CNTs) are of high interest for sensing applications, owing to their superior mechanical strength, high Young’s modulus and low density. In this work, we report on a facile approach for the fabrication of carbon nanotube devices using a four terminal configuration. Oriented carbon nanotube films were pulled out from a CNT forest wafer and then twisted into a yarn. Both the CNT film and yarn were arranged on elastomer membranes/diaphragms which were ar-ranged on a laser cut acrylic frame to form pressure sensors. The sensors were calibrated using a precisely controlled pressure system, showing a large change of the output voltage of approximately 50 mV at a constant supply current of 100µA and under a low applied pressure of 15 mbar. The results indicate the high potential of using CNT films and yarns for pressure sensing applications

A Wearable, Bending-Insensitive Respiration Sensor Using Highly Oriented Carbon Nanotube Film

Recently, wearable electronics for health monitoring have been demonstrated with considerable benefits for early-stage disease detection. This article reports a flexible, bending-insensitive, bio-compatible and lightweight respiration sensor. The sensor consists of highly oriented carbon nanotube (HO-CNT) films embedded between electro-spun polyacrylonitrile (PAN) layers. By aligning carbon nanotubes between the PAN layers, the sensor exhibits a high sensitivity towards airflow (340 mV/(m/s)) and excellent flexibility and robustness. In addition, the HO-CNT sensor is insensitive to mechanical bending, making it suitable for wearable applications. We successfully demonstrated the attachment of the sensor to the human philtrum for real-time monitoring of the respiration quality. These results indicate the potential of HO-CNT flow sensor for ubiquitous personal health care applications

Polyacrylonitrile-carbon nanotube-polyacrylonitrile: a versatile robust platform for flexible multifunctional electronic devices in medical applications

Flexible multifunctional electronic devices are of high interest for a wide range of applications including thermal therapy and respiratory devices in medical treatment, safety equipment, and structural health monitoring systems. This paper reports a scalable and efficient strategy of manufacturing a polyacrylonitrile-carbon nanotube-polyacrylonitrile (PAN-CNT-PAN)robust flexible platform for multifunctional electronic devices including flexible heaters, temperature sensors, and flexible thermal flow sensors. The key advantages of this platform include low cost, porosity, mechanical robustness, and electrical stability under mechanical bending, enabling the development of fast-response flexible heaters with a response time of ≈1.5 s and relaxation time of ≈1.7 s. The temperature-sensing functionality is also investigated with a range of temperature coefficient of resistances from −650 to −900 ppm K−1. A flexible hot-film sensing concept is successfully demonstrated using PAN-CNT-PAN with a high sensitivity of 340 mV (m s−1)−1. The sensitivity enhancement of 50% W−1 is also observed with increasing supply power. The low cost, porosity, versatile, and robust properties of the proposed platform will enable the development of multifunctional electronic devices for numerous applications such as flexible thermal management, temperature stabilization in industrial processing, temperature sensing, and flexible/wearable devices for human healthcare applications

Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications

Piezoresistive effect has been a dominant mechanical sensing principle that has been widely employed in a range of sensing applications. This transducing concept still receives great attentions because of the huge demand for developing small, low-cost, and high-performance sensing devices. Many researchers have extensively explored new methods to enhance the piezoresistive effect and to make sensors more and more sensitive. Many interesting phenomena and mechanisms to enhance the sensitivity have been discovered. Numerous review papers on piezoresistive effect were published, however, there is no comprehensive review article that thoroughly analyses methods and approaches to enhance the piezoresistive effect. This paper comprehensively reviews and presents all the advanced enhancement methods ranging from quantum physical effect, new materials, nanoscopic and macroscopic structures, and from conventional to flexible, stretchable and wearable applications. In addition, the paper summarises results recently achieved on applying the above-mentioned innovative sensing enhancement techniques in making extremely sensitive piezoresistive transducers

High temperature silicon-carbide-based flexible electronics for monitoring hazardous environments

With its unprecedented properties over conventional rigid platforms, flexible electronics have been a significant research topic in the last decade, offering a broad range of applications from bendable display, flexible solar-energy systems, to soft implantable-devices for health monitoring. Flexible electronics for harsh and hazardous environments have also been extensively investigated. In particular, devices with stretchability and bend-ability as well as tolerance to extreme and toxic operating conditions are imperative. This work presents silicon carbide grown on silicon and then transferred onto polyimide substrate as a new platform for flexible sensors for hostile environments. Combining the excellent electrical properties of SiC and high temperature tolerance of polyimide, we demonstrated for the first time a flexible SiC sensors that can work above 400 °C. This new sensing platform opens exciting opportunities toward flexible sensing applications in hazardous environments

Piezoresistive effect with a gauge factor of 18 000 in a semiconductor heterojunction modulated by bonded light-emitting diodes

Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED’s illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors

Ultrasensitive Self-Powered Position-Sensitive Detector Based on n‑3C-SiC/p-Si Heterojunctions

Cubic silicon carbide (3C-SiC) on silicon (Si) is an excellent platform for developing sensors that can function in a harsh environment due to its superior mechanical, electrical, chemical, optoelectronic properties and low wafer cost. Here, we report a position-sensitive detector (PSD) based on the heterojunction formed between n-type SiC and p-type Si. The PSD utilizes the lateral photovoltaic effect (LPE) with a linear dependence of LPE on laser spot positions. The position sensitivity is found to be 554.82 mV/mm at zero bias conditions under an illumination of 200 μW (637 nm), which is among the most sensitive LPE-based PSDs to date. The generation of the lateral photovoltage (LPV) under light illumination is investigated by examining the band diagram of the 3C-SiC/Si heterojunction. The influence of the illumination intensity and wavelength on the position sensitivity is also explained. This work demonstrates a potential application for ultrasensitive, self-powered optoelectronic sensing of the n-3C-SiC/p-Si platform