On the Kinetic Roughening in Polymer Film Growth by Vapor Deposition

This is a Comment on a recent publication: Y.-P. Zhao et al., Phys. Rev. Lett. 85, 3229 (2000). In the Letter, the authors report on an experimental investigation of polymeric (p-xylene) thin film growth and propose a new universality class not previously known. Here, we point out that the critical exponents reported in the Letter are consistent with the critical exponents of Das Sarma-Tamborenea growth model.Comment: 2 pages, 1 figure include

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, doping, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism. We find that spin-disorder scattering, formation of bound state, and the population of the minority spin band are all operational in DMFT in different parameter range. We also develop a complementary Boltzmann transport theory for scattering by screened ionized impurities. The difference in the screening properties between paramagnetic ($T>T_c$) and ferromagnetic ($T<T_c$) states gives rise to the temperature dependence (increase or decrease) of resistivity, depending on the carrier density, as the system goes from the paramagnetic phase to the ferromagnetic phase. The metallic behavior below $T_c$ for optimally doped DMS samples can be explained in the Boltzmann theory by temperature dependent screening and thermal change of carrier spin polarization.Comment: 15 pages, 15 figure

Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap $\Delta$ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential, $\Delta_{\rm cr}$, separating the insulating regime from a percolative regime in which less than half of the area of the bilayer graphene sample is insulating. We find that most of the current experiments are in the percolative regime with $\Delta_{\rm cr}<<\Delta$. The huge suppression of $\Delta_{\rm cr}$ compared with $\Delta$ provides a possible explanation for the large difference between the theoretical band gap $\Delta$ and the experimentally extracted transport gap.Comment: 5 Pages, 2 figures. Published versio