Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap $\Delta$ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential, $\Delta_{\rm cr}$, separating the insulating regime from a percolative regime in which less than half of the area of the bilayer graphene sample is insulating. We find that most of the current experiments are in the percolative regime with $\Delta_{\rm cr}<<\Delta$. The huge suppression of $\Delta_{\rm cr}$ compared with $\Delta$ provides a possible explanation for the large difference between the theoretical band gap $\Delta$ and the experimentally extracted transport gap.Comment: 5 Pages, 2 figures. Published versio

Screening and transport in 2D semiconductor systems at low temperatures

Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects and not from phonon scattering) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder (i.e., high-mobility) 2D samples and also why some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover where the system reverses the sign of the temperature derivative of the 2D resistivity at high temperatures.Comment: 17 pages and 8 figures. arXiv admin note: substantial text overlap with arXiv:1401.476

Probing Quark Gluon Plasma by Heavy Flavors

The drag and diffusion coefficients of charm and bottom quarks propagating through quark gluon plasma (QGP) have been evaluated within the framework of perturbative Quantum Chromodynamics (pQCD). Both radiative and collisional processes of dissipation are included in evaluating these transport coefficients. The dead cone as well as the LPM effects on radiative energy loss of heavy quarks have also been considered. The Fokker Planck equation has been solved to study the dissipation of heavy quarks momentum in QGP. The nuclear suppression factor, $R_{\mathrm AA}$ and the elliptic flow $v_2^{HF}$ of the non-photonic electrons resulting from the semi-leptonic decays of hadrons containing charm and bottom quarks have been evaluated for RHIC and LHC nuclear collision conditions. We find that the observed $R_{\mathrm AA}$ and $v_2$ at RHIC can be reproduced simultaneously within the pQCD framework.Comment: To appear in the proceedings of WPCF, 2011, Tokyo, Japa

Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen

We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET and very different in n-GaAs 2D metallic systems.Comment: 7 pages, 5 figures, revised version with substantial additio

Valley-dependent 2D transport in Si-MOSFETs

Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where screening effects are important. We show conclusively that, given the same bare Coulomb disorder, the 2D mobility for a given system increases monotonically with increasing valley degeneracy. We also show that the temperature and the parallel magnetic field dependence of the 2D conductivity is strongly enhanced by increasing valley degeneracy. We analytically consider the low temperature limit of 2D transport, particularly its theoretical dependence on valley degeneracy, comparing with our full numerical results and with the available experimental results. We make qualitative and quantitative predictions for the parallel magnetic field induced 2D magnetoresistance in recently fabricated high-mobility 6-valley Si(111)-on-vacuum inversion layers. We also provide a theory for 2D transport in ultrahigh mobility Si(111) structures recently fabricated in the laboratory, discussing the possibility of observing the fractional quantum Hall effect in such Si(111) structures.Comment: 8 pages, 7 figure

Surface polar optical phonon interaction induced many-body effects and hot-electron relaxation in graphene

We theoretically study various aspects of the electron-surface optical phonon interaction effects in graphene on a substrate made of polar materials. We calculate the electron self-energy in the presence of the surface phonon-mediated electron-electron interaction focusing on how the linear chiral graphene dispersion is renormalized by the surface phonons. The electron self-energy as well as the quasiparticle spectral function in graphene are calculated, taking into account electron-polar optical phonon interaction by using a many body perturbative formalism. The scattering rate of free electrons due to polar interaction with surface optical phonons in a dielectric substrate is calculated as a function of the electron energy, temperatures, and carrier density. Effects of screening on the self-energy and scattering rate are discussed. Our theory provides a comprehensive quantitative (and qualitative) picture for surface phonon interaction induced many-body effects and hot electron relaxation in Dirac materials.Comment: 10 pages, 10 figure