Density-matrix theory of the optical dynamics and transport in quantum cascade structures: The role of coherence

The impact of coherence on the nonlinear optical response and stationary transport is studied in quantum cascade laser structures. Nonequilibrium effects such as pump-probe signals, the spatio-temporally resolved electron density evolution, and the subband population dynamics (Rabi flopping) as well as the stationary current characteristics are investigated within a microscopic density-matrix approach. Focusing on the stationary current and the recently observed gain oscillations, it is found that the inclusion of coherence leads to observable coherent effects in opposite parameter regimes regarding the relation between the level broadening and the tunnel coupling across the main injection barrier. This shows that coherence plays a complementary role in stationary transport and nonlinear optical dynamics in the sense that it leads to measurable effects in opposite regimes. For this reason, a fully coherent consideration of such nonequilibrium structures is necessary to describe the combined optical and transport propertiesComment: 14 pages, 11 figures; final versio

CEP-stable Tunable THz-Emission Originating from Laser-Waveform-Controlled Sub-Cycle Plasma-Electron Bursts

We study THz-emission from a plasma driven by an incommensurate-frequency two-colour laser field. A semi-classical transient electron current model is derived from a fully quantum-mechanical description of the emission process in terms of sub-cycle field-ionization followed by continuum-continuum electron transitions. For the experiment, a CEP-locked laser and a near-degenerate optical parametric amplifier are used to produce two-colour pulses that consist of the fundamental and its near-half frequency. By choosing two incommensurate frequencies, the frequency of the CEP-stable THz-emission can be continuously tuned into the mid-IR range. This measured frequency dependence of the THz-emission is found to be consistent with the semi-classical transient electron current model, similar to the Brunel mechanism of harmonic generation

Real-time imaging using a 4.3-THz quantum cascade laser and a 320×240 microbolometer focal-plane array

Abstract: We report on the development of a compact, easy-to-use terahertz radiation source, which combines a quantum-cascade laser (QCL) operating at 3.1 THz with a compact, low-input-power Stirling cooler. The QCL, which is based on a two-miniband design, has been developed for high output and low electrical pump power. The amount of generated heat complies with the nominal cooling capacity of the Stirling cooler of 7 W at 65 K with 240 W of electrical input power. Special care has been taken to achieve a good thermal coupling between the QCL and the cold finger of the cooler. The whole system weighs less than 15 kg including the cooler and power supplies. The maximum output power is 8 mW at 3.1 THz. With an appropriate optical beam shaping, the emission profile of the laser is fundamental Gaussian. The applicability of the system is demonstrated by imaging and molecular-spectroscopy experiments. Hübers, "Sub-megahertz frequency stabilization of a terahertz quantum cascade laser to a molecular absorption line," Appl. Phys. Lett. 96(7), 071112 (2010). ©2010 Optical Society of Americ

Time and Frequency Resolved THz Spectroscopy of Micro- and Nano-Systems

Terahertz time-domain spectroscopy is applied to characterize ultra-thin metallic layers and nanoscale composite material - single-wall carbon nanotube mat

Time and Frequency Resolved THz Spectroscopy of Micro- and Nano-Systems

Terahertz time-domain spectroscopy is applied to characterize ultra-thin metallic layers and nanoscale composite material - single-wall carbon nanotube mat

Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region