A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

We propose a simple expression to relate the total excess noise factor of a single-carrier multiplication staircase avalanche photodiode (APD) to the excess noise factor and gain given by the individual conduction band discontinuities. The formula is valid when electron impact ionization dominates hole impact ionization; hence, it is especially suited for staircase APDs with In-rich multiplication regions, as opposed, for example, to GaAs/AlGaAs systems where hole ionization plays an important role. The formula has been verified by accurate means of numerical simulations based on a newly developed nonlocal history dependent impact ionization model

Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization

A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications

Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer

Going Ballistic: Graphene Hot Electron Transistors

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

We report on a suite of modeling approaches for the optimization of Avalanche Photodiodes for X-rays detection. Gain and excess noise are computed efficiently using a non-local/history dependent model that has been validated against full-band Monte Carlo simulations. The (stochastic) response of the detector to photon pulses is computed using an improved Random-Path-Length algorithm. As case studies, we consider diodes consisting of AlGaAs/GaAs multi-layers with separated absorption and multiplication regions. A superlattice creating a staircase conduction band structure is employed in the multiplication region to keep the multiplication noise low. Gain and excess noise have been measured in devices fabricated with such structure and successfully compared with the developed models

Reversibilià e prestazioni delle operazioni e dei prodotti per il restauro

Dissemination of evidence-based parenting programs in developing countries is warranted, but prior to dissemination, the cultural appropriateness of programs needs to be assessed. This study provides an evaluation of the level of acceptability among Indonesian parents and the efficacy of a brief parenting program, the Triple P-Positive Parenting seminar. Thirty Indonesian parents of children aged 2-12 years old residing in Australia participated in the study. A 90-minute Triple P seminar with minimal changes in the format was delivered to parents in Indonesian. Parents reported a high level of acceptability and satisfaction with the program content. The efficacy of the program was also explored. Parents reported less frequent use of dysfunctional parenting practices, particularly permissive parenting style, and reduction in the intensity of child emotional and behavioural problems 3 weeks after the seminar. The effect was maintained at 3-month follow up. The results suggest that the Triple P seminar is acceptable and useful for Indonesian parents. Substantial changes in the content of the parenting program may not be necessary. Translated materials, culturally relevant examples and opportunity for questions appeared sufficient for parents. Future studies are required including randomized controlled trials and larger sample sizes