Sectoral Transformations in Neo-Patrimonial Rentier States: Tourism Development and State Policy in Egypt

This article challenges claims that liberalising state regulated markets in developing countries may induce lasting economic development. The analysis of the rise of tourism in Egypt during the last three decades suggests that the effects of liberalisation and structural adjustment are constrained by the neo-patrimonial character of the Egyptian political system. Since the decline of oil rent revenues during the 1980s tourism development was the optimal strategy to compensate for the resulting fiscal losses. Increasing tourism revenues have helped in coping with macroeconomic imbalances and in avoiding more costly adjustment of traditional economic sectors. Additionally, they provided the private elite with opportunities to generate large profits. Therefore, sectoral transformations due to economic liberalisation in neo-patrimonial Rentier states should be described as a process, which has led to the diversification of external rent revenues, rather than to a general downsizing of the Rentier character of the economy

Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell

The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed. A design of a single memristor memory cell using the proposed model for the platinum electrodes titanium dioxide memristor is illustrated. A specific voltage pulse is used with varying its parameters (amplitude or pulse width) to store different number of states in a single memristor. New state variation parameters associated with the utilized model are provided and their effects on write and read processes of memristive multi-states are analysed. PSPICE simulations are also held, and they show a good agreement with the data obtained from the analysis

A Simplified Analytical Technique for High Frequency Characterization of Resonant Tunneling Diode

his paper proposes a simplified analytical technique for high frequency characterization of the resonant tunneling diode (RTD). An equivalent circuit of the RTD that consists of a parallel combination of conductance, G (V, f), and capacitance, C (V, f) is formulated. The proposed approach uses the measured DC current versus voltage characteristic of the RTD to extract the equivalent circuit elements parameters in the entire bias range. Using the proposed analytical technique, the frequency response - including the high frequency range - of many characteristic aspects of the RTD is investigated. Also, the maximum oscillation frequency of the RTD is calculated. The results obtained have been compared with those concluded and reported in the literature. The reported results in literature were obtained through simulation of the RTD at high frequency using either a computationally complicated quantum simulator or through difficult RF measurements. A similar pattern of results and highly concordant conclusion are obtained. The proposed analytical technique is simple, correct, and appropriate to investigate the behavior of the RTD at high frequency. In addition, the proposed technique can be easily incorporated into SPICE program to simulate circuits containing RTD