7 research outputs found
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Germanium (Ge) is increasingly used as a substrate for high-performance
optoelectronic, photovoltaic, and electronic devices. These devices are usually
grown on thick and rigid Ge substrates manufactured by classical wafering
techniques. Nanomembranes (NMs) provide an alternative to this approach while
offering wafer-scale lateral dimensions, weight reduction, limitation of waste,
and cost effectiveness. Herein, we introduce the Porous germanium Efficient
Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of
wafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and substrate
reuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nm
on top of nanoengineered void layer enabling layer detachment. Furthermore,
these Ge NMs exhibit compatibility with the growth of III-V materials.
High-resolution transmission electron microscopy (HRTEM) characterization shows
Ge NMs crystallinity and high-resolution X-ray diffraction (HRXRD) reciprocal
space mapping endorses high-quality GaAs layers. Finally, we demonstrate the
chemical reconditioning process of the Ge substrate, allowing its reuse, to
produce multiple free-standing NMs from a single parent wafer. The PEELER
process significantly reduces the consumption of Ge during the fabrication
process which paves the way for a new generation of low-cost flexible
optoelectronics devices.Comment: 17 pages and 6 figures along with 3 figures in supporting informatio
Le médicament générique (le pharmacien face à la substitution)
AMIENS-BU Santé (800212102) / SudocSudocFranceF
Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO 2 ) Multilayers: A Promising Route for Si-Based Infrared Plasmonics
International audienceAs building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix. These materials are obtained by evaporation of heavily Phosphorus-doped SiO/SiO2 multilayers in a ultrahigh vacuum chamber followed by rapid thermal annealing. For P contents between 0.7 and 1.9 at%, structural investigations at the nanoscale give clear evidence that P atoms are mainly located in the core of Si nanocrystals with concentrations reaching up to 10 at%, i.e. well beyond the solid solubility limit of P in bulk Si. Alloying and formation of SiP nanoparticles is observed for P contents exceeding 4 at% in the multilayer. Infrared absorption measurements give evidence of a localized surface plasmon resonance located in the 3 to 6 µm range. A core-shell structure was used to model Si nanocrystals embedded in a silica matrix. Based on the Mie theory and the Drude model, both the mobility and the free charge carrier density were extracted from the simulation, with values reaching 27 cm 2 V-1 s-1 and 2.3×10 20 cm-3 , respectively. This results in a dopant activation rate of about 8 %
Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO 2 ) Multilayers: A Promising Route for Si-Based Infrared Plasmonics
International audienceAs building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix. These materials are obtained by evaporation of heavily Phosphorus-doped SiO/SiO2 multilayers in a ultrahigh vacuum chamber followed by rapid thermal annealing. For P contents between 0.7 and 1.9 at%, structural investigations at the nanoscale give clear evidence that P atoms are mainly located in the core of Si nanocrystals with concentrations reaching up to 10 at%, i.e. well beyond the solid solubility limit of P in bulk Si. Alloying and formation of SiP nanoparticles is observed for P contents exceeding 4 at% in the multilayer. Infrared absorption measurements give evidence of a localized surface plasmon resonance located in the 3 to 6 µm range. A core-shell structure was used to model Si nanocrystals embedded in a silica matrix. Based on the Mie theory and the Drude model, both the mobility and the free charge carrier density were extracted from the simulation, with values reaching 27 cm 2 V-1 s-1 and 2.3×10 20 cm-3 , respectively. This results in a dopant activation rate of about 8 %
Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO 2 ) Multilayers: A Promising Route for Si-Based Infrared Plasmonics
International audienceAs building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix. These materials are obtained by evaporation of heavily Phosphorus-doped SiO/SiO2 multilayers in a ultrahigh vacuum chamber followed by rapid thermal annealing. For P contents between 0.7 and 1.9 at%, structural investigations at the nanoscale give clear evidence that P atoms are mainly located in the core of Si nanocrystals with concentrations reaching up to 10 at%, i.e. well beyond the solid solubility limit of P in bulk Si. Alloying and formation of SiP nanoparticles is observed for P contents exceeding 4 at% in the multilayer. Infrared absorption measurements give evidence of a localized surface plasmon resonance located in the 3 to 6 µm range. A core-shell structure was used to model Si nanocrystals embedded in a silica matrix. Based on the Mie theory and the Drude model, both the mobility and the free charge carrier density were extracted from the simulation, with values reaching 27 cm 2 V-1 s-1 and 2.3×10 20 cm-3 , respectively. This results in a dopant activation rate of about 8 %
ETC L2 ARCHIVE, Lonzee, 2016-2022
Archive Product for ICOS Ecosystem data. It is the most complete data collection for the ICOS ecosystem station and it contains all the data (continuous fluxes and meteo and ancillary) and metadata collected and produced. https://hdl.handle.net/11676/bEvqWH6Y2ydt8tlgGbrcRSs