7 research outputs found

    Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

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    We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p-i-n structures, with nominal compositions of 10% In and 3.8% N, can be improved significantly by the RTA treatment to match that of optimally grown structures. The optimally annealed devices exhibit overall improvement in optical and electrical characteristics, including increased photoluminescence brightness, reduced density of deep-level traps, reduced series resistance resulting from the GaAs/GaInNAs heterointerface, lower dark current, and significantly lower background doping density, all of which can be attributed to the reduced structural disorder in the GaInNAs alloy.© 2012 TMS

    First cross-correlation analysis of interferometric and resonant-bar gravitational-wave data for stochastic backgrounds (vol 76, art no 022001, 2007)

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    First cross-correlation analysis of interferometric and resonant-bar gravitational-wave data for stochastic backgrounds (vol 76, art no 022001, 2007)

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    Data from the LIGO Livingston interferometer and the ALLEGRO resonant-bar detector, taken during LIGO’s fourth science run, were examined for cross correlations indicative of a stochastic gravitational-wave background in the frequency range 850–950 Hz, with most of the sensitivity arising between 905 and 925 Hz. ALLEGRO was operated in three different orientations during the experiment to modulate the relative sign of gravitational-wave and environmental correlations. No statistically significant correlations were seen in any of the orientations, and the results were used to set a Bayesian 90% confidence level upper limit of Ωgw(f)≤1.02, which corresponds to a gravitational-wave strain at 915 Hz of 1.5×10-23 Hz-1/2. In the traditional units of h1002Ωgw(f), this is a limit of 0.53, 2 orders of magnitude better than the previous direct limit at these frequencies. The method was also validated with successful extraction of simulated signals injected in hardware and software
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