17 research outputs found

    Cross section of the reaction e+e−→π+π−π+π−e^+ e^- \to \pi^+\pi^-\pi^+\pi^- below 1 GeV at CMD-2

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    Using 3.07 pb−1{pb}^{-1} of data collected in the energy range 0.60-0.97 GeV by CMD-2, about 150 events of the process \epm \to \pch have been selected. The energy dependence of the cross section agrees with the assumption of the a1(1260)πa_1(1260) \pi intermediate state which is dominant above 1 GeV. For the first time \fourpi events are observed at the ρ\rho meson energy. Under the assumption that all these events come from the ρ\rho meson decay, the value of the cross section at the ρ\rho meson peak corresponds to the following decay width: \Gamma(\rho^0 \to \fourpi) = (2.8 \pm 1.4 \pm 0.5) {keV} or to the branching ratio B(\rho^0 \to \fourpi) = (1.8 \pm 0.9 \pm 0.3) \cdot 10 ^{-5}.Comment: 15 pages, 5 figure

    Progress and Challenges in Coupled Hydrodynamic-Ecological Estuarine Modeling

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    Design rules for highly parallel free-space optical interconnects

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    Passive Microwave Planar Circuitsfor Arbitrary UWB Pulse Shaping

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    Self-induced thermal nonlinearities in InGaAsP microtubes at telecom wavelengths

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    We demonstrate, for the first time, dynamical thermal effects in InGaAsP microtubes at telecom wavelengths. Such effect can be avoided or exploited for passive or active applications by choosing appropriate resonance wavelengths. \ua9 2012 OSA.Peer reviewed: YesNRC publication: Ye

    Self-organized quantum-dot semiconductor microtube resonators and their integration on silicon photonics platforms

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    We present results on InGaAsP rolled-up microtube resonators with embedded InAs quantum dots with strong coherent emission at 3c 1.55 m. We also show coupling of these resonators to Silicon-on-Insulator waveguides. \ua9 2011 IEEE.Peer reviewed: YesNRC publication: Ye

    Dynamical thermal effects in InGaAsP microtubes at telecom wavelengths

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    We report on the observation of a dynamical thermal effect in InGaAsP microtubes at telecom wavelengths. The microtubes are fabricated by releasing a strained semiconductor bilayer and are picked up by abruptly tapered optical fibers for subsequent coupling with adiabatically tapered optical fibers. As a result of absorption by InAs quantum dots embedded in the tube structure, these microtubes show dynamical thermal effects at wavelengths around 1525 nm and 1578 nm, while they are passive at longer wavelengths near 1634 nm. The photon absorption induced thermal effect is visualized by generating a pair of microbottles. The dynamical thermal effect can be avoided or exploited for passive or active applications by utilizing appropriate resonance wavelengths. \ua9 2012 Optical Society of America.Peer reviewed: YesNRC publication: Ye
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