Strength can be controlled by edge dislocations in refractory high-entropy alloys

Energy efficiency is motivating the search for new high-temperature (high-T) metals. Some new body-centered-cubic (BCC) random multicomponent “high-entropy alloys (HEAs)” based on refractory elements (Cr-Mo-Nb-Ta-V-W-Hf-Ti-Zr) possess exceptional strengths at high temperatures but the physical origins of this outstanding behavior are not known. Here we show, using integrated in-situ neutron-diffraction (ND), high-resolution transmission electron microscopy (HRTEM), and recent theory, that the high strength and strength retention of a NbTaTiV alloy and a high-strength/low-density CrMoNbV alloy are attributable to edge dislocations. This finding is surprising because plastic flows in BCC elemental metals and dilute alloys are generally controlled by screw dislocations. We use the insight and theory to perform a computationally-guided search over 10(7) BCC HEAs and identify over 10(6) possible ultra-strong high-T alloy compositions for future exploration

Parameterization studies of the properties of the X-ray dips for Low Mass X-ray binary X1916-053

The ultra-compact Low Mass X-ray Binary (LMXB) X1916-053, composed of a neutron star and a semi-degenerated white dwarf, exhibits periodic X-ray dips with variable width and depth. We have developed new methods to parameterize the dip to systematically study its variations. This helps to further understand binary and accretion disk behaviors. The RXTE 1998 observations clearly show a 4.87d periodic variation of the dip width. This is probably due to the nodal precession of the accretion disk, although there are no significant sidebands in the spectrum from the epoch folding search. From the negative superhump model (Larwood et. al. 1996), the mass ratio can be estimated as q = 0.045. Combined with more than 24 years of historical data, we found an orbital period derivative of $\dot{P}_{orb}/P_{orb}=(1.62 \pm 0.48)\times 10^{-7} yr^{-1}$ and established a quadratic ephemeris for the X-ray dips. The period derivative seems inconsistent with the prediction of the standard model of binary orbital evolution proposed by Rappaport et. al. (1987). On the other hand, the radiation-driven model (Tavani et. al. 1991) may properly interpret the period derivative even though the large mass outflow predicted by this model has never been observed in this system. With the best ephemeris, we obtained that the standard deviation of primary dips are smaller than that of secondary dips. This means that the primary dips are more stable than the secondary dips. Thus, we conclude that the primary dips of X1916-053 occur from the bulge at the rim instead of the ring of the disk proposed by Frank et. al. (1987).Comment: accepted by Ap

Omnidirectional wavelength selective emitters/absorbers based on dielectric-filled anti-reflection coated two-dimensional metallic photonic crystals

We demonstrate designs of dielectric-filled anti-reflection coated (ARC) two-dimensional (2D) metallic photonic crystals (MPhCs) capable of omnidirectional, polarization insensitive, wavelength selective emission/absorption. Up to 26% improvement in hemispherically averaged emittance/absorptance below the cutoff wavelength is observed for optimized hafnium oxide filled 2D tantalum (Ta) PhCs over the unfilled 2D Ta PhCs. The optimized designs possess high hemispherically averaged emittance/absorptance of 0.86 at wavelengths below the cutoff wavelength and low hemispherically averaged emittance/absorptance of 0.12 at wavelengths above the cutoff wavelength, which is extremely promising for applications such as thermophotovoltaic energy conversion, solar absorption, and infrared spectroscopy.Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies (Contract W911NF-13-D-0001)United States. Dept. of Energy. Office of Science (Solid-State Solar-Thermal Energy Conversion Center Grant DE-SC0001299

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3698461

First-principles study of ternary fcc solution phases from special quasirandom structures

In the present work, ternary Special Quasirandom Structures (SQSs) for a fcc solid solution phase are generated at different compositions, $x_A=x_B=x_C=\tfrac{1}{3}$ and $x_A=\tfrac{1}{2}$, $x_B=x_C=\tfrac{1}{4}$, whose correlation functions are satisfactorily close to those of a random fcc solution. The generated SQSs are used to calculate the mixing enthalpy of the fcc phase in the Ca-Sr-Yb system. It is observed that first-principles calculations of all the binary and ternary SQSs in the Ca-Sr-Yb system exhibit very small local relaxation. It is concluded that the fcc ternary SQSs can provide valuable information about the mixing behavior of the fcc ternary solid solution phase. The SQSs presented in this work can be widely used to study the behavior of ternary fcc solid solutions.Comment: 20 pages, 7 figure

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al2O3/metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al2O3 lead to the development of ≈0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 ± 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al2O3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al2O3 interface of 3.1 ± 0.1 eV and 2.5 ± 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0–2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection

Gain of gene regulatory network interconnectivity at the origin of vertebrates

Signaling pathways control a large number of gene regulatory networks (GRNs) during animal development, acting as major tools for body plan formation [A. Pires-daSilva, R. J. Sommer, Nat. Rev. Genet. 4, 39-49 (2003)], although only a few of these pathways operate during this period [J. J. Sanz-Ezquerro, A. E. Munsterberg, € S. Stricker, Front. Cell Dev. Biol. 5, 76 (2017)]. Moreover, most of them have been largely conserved during metazoan evolution [L. S. Babonis, M. Q. Martindale, Philos. Trans. R. Soc. Lond. B Biol. Sci. 372, 20150477 (2017)]. How evolution has generated a vast diversity of animal morphologies with such a limited number of tools is still largely unknown. Here, we show that gain of interconnectivity between signaling pathways and the GRNs they control may have critically contributed to the origin of vertebrates. We perturbed the retinoic acid, Wnt, FGF, and Nodal signaling pathways during gastrulation in the invertebrate chordate amphioxus and zebrafish and compared the effects on gene expression and cis-regulatory elements (CREs). We found that multiple developmental genes gain response to these pathways through vertebrate-specific CREs. Moreover, in contrast to amphioxus, many of these CREs responded to multiple pathways in zebrafish, which reflects their high interconnectivity. Furthermore, we found that vertebrate-specific cell types are more enriched in highly interconnected genes than in tissues with more ancient origin. Thus, the increase of CREs in vertebrates integrating inputs from different signaling pathways probably contributed to gene expression complexity and to the formation of new cell types and morphological novelties in this lineage.This project has received funding from the European Research Council under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 740041) and the Spanish Ministerio de Economía y Competitividad (Grants BFU2016-74961-P and PID2019-103921GB-I00 to J.L.G.-S. and J.J.T.). This work was also supported by the institutional grant Unidad de Excelencia María de Maeztu (Grant MDM-2016-0687 to the Department of Gene regulation and morphogenesis of Centro Andaluz de Biología del Desarrollo). M.F. was funded by the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement [#800396]. M.S., H.E., and S.B. were supported by the CNRS, and H.E. and S.B. additionally by Agence Nationale de la Recherche (ANR) CHORELAND (Grant ANR-16-CE12-0008-01) and the Institut Universitaire de France. Y.-H.S. and J.-K.Y. are supported by intramural funds from Academia Sinica and grants from Ministry of Science and Technology, Taiwan (Grants 110-2326-B-001-006 to Y.-H.S. and 110-2621-B-001-001-MY3 to J.-K.Y.)