Chemical Vapour Deposition of Amorphous Ru(P) Thin Films from Ru Trialkylphosphite Hydride Complexes

The ruthenium phosphite hydride complexes H2Ru(P(OR)(3))(4) (R = Me (1), Et (2), Pr-i (3)) were used as CVD precursors for the deposition of films of amorphous ruthenium-phosphorus alloys. The as-deposited films were X-ray amorphous and XPS analysis revealed that they were predominantly comprised of Ru and P in zero oxidation states. XPS analysis also showed the presence of small amounts of oxidized ruthenium and phosphorus. The composition of the films was found to depend on ligand chemistry as well as the deposition conditions. The use of H-2 as the carrier gas had the effect of increasing the relative concentrations of P and O for all films. Annealing films to 700 degrees C under vacuum produced films of polycrystalline hcp Ru while a flowing stream of H-2 resulted in polycrystalline hcp RuP.Welch Foundation F-816Petroleum Research FundAmerican Chemical Society 47014-ACSNSF 0741973Chemistr

Shrinking Point Bifurcations of Resonance Tongues for Piecewise-Smooth, Continuous Maps

Resonance tongues are mode-locking regions of parameter space in which stable periodic solutions occur; they commonly occur, for example, near Neimark-Sacker bifurcations. For piecewise-smooth, continuous maps these tongues typically have a distinctive lens-chain (or sausage) shape in two-parameter bifurcation diagrams. We give a symbolic description of a class of "rotational" periodic solutions that display lens-chain structures for a general $N$-dimensional map. We then unfold the codimension-two, shrinking point bifurcation, where the tongues have zero width. A number of codimension-one bifurcation curves emanate from shrinking points and we determine those that form tongue boundaries.Comment: 27 pages, 6 figure

Determinant representations of scalar products for the open XXZ chain with non-diagonal boundary terms

With the help of the F-basis provided by the Drinfeld twist or factorizing F-matrix for the open XXZ spin chain with non-diagonal boundary terms, we obtain the determinant representations of the scalar products of Bethe states of the model.Comment: Latex file, 28 pages, based on the talk given by W. -L. Yang at Statphys 24, Cairns, Australia, 19-23 July, 201

Conduction mechanisms of epitaxial EuTiO3 thin films

To investigate leakage current density versus electric field characteristics, epitaxial EuTiO3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition and were post-annealed in a reducing atmosphere. This investigation found that conduction mechanisms are strongly related to temperature and voltage polarity. It was determined that from 50 to 150 K the dominant conduction mechanism was a space-charge-limited current under both negative and positive biases. From 200 to 300 K, the conduction mechanism shows Schottky emission and Fowler-Nordheim tunneling behaviors for the negative and positive biases, respectively. This work demonstrates that Eu3+ is one source of leakage current in EuTiO3 thin films.Comment: 17 pages,4 figures, conferenc