Quasi-exact solution to the Dirac equation for the hyperbolic-secant potential

Copyright © 2014 American Physical SocietyWe analyze bound modes of two-dimensional massless Dirac fermions confined within a hyperbolic secant potential, which provides a good fit for potential profiles of existing top-gated graphene structures. We show that bound states of both positive and negative energies exist in the energy spectrum and that there is a threshold value of the characteristic potential strength for which the first mode appears. Analytical solutions are presented in several limited cases and supercriticality is discussed.URCOEU FP7 ITN NOTEDEVFP7 IRSES project SPINMETFP7 IRSES project QOCaNFP7 IRSES project InterNo

Mechanisms for Strong Anisotropy of In-Plane g-Factors in Hole Based Quantum Point Contacts

In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional Bþk4 −σþ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B−k2 −σþ considered until now

Electrical control of the g tensor of the first hole in a silicon MOS quantum dot

Single holes confined in semiconductor quantum dots are a promising platform for spin-qubit technology, due to the electrical tunability of the g factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole-spin states. Here, we study the underlying hole-spin physics of the first hole in a silicon planar metal-oxide-semiconductor (MOS) quantum dot. We show that nonuniform electrode-induced strain produces nanometer-scale variations in the heavy-hole–light-hole (HH-LH) splitting. Importantly, we find that this nonuniform strain causes the HH-LH splitting to vary by up to 50% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the nonuniform strain profile, allowing a mechanism for electric modulation of the hole g tensor. Using this mechanism, we demonstrate tuning of the hole g factor by up to 500%. In addition, we observe a potential sweet spot where dg(11¯0)/dV=0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a technology involving engineering of nonuniform strains to optimize spin-based devices.QN/Veldhorst LabTU Delft ServicesQuTec