Preparation of Zinc-Sulfide Thin Films in the Presence of Sodium Tartrate as a complexing agent

The article offers information on the experiment done for the electrodeposition of zinc-sulfide (ZnS) thin films on the titanium substrate in the presence of sodium tartrate as a complexing agent. It states that the electrodeposition process has several advantages such as the possibility for large-scale production and minimum waste of components. It mentions that depositions were carried out by varying the deposition potential to determine the optimal conditions of deposition of ZnS thin film

Secondary crystalline phases identification in Cu2ZnSnSe4 thin films: contributions from Raman scattering and photoluminescence

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu2ZnSnSe4 (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some secondary phases. Thin films of CZTSe, Cu2SnSe3, ZnSe, SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were estimated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials’ model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identification of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.info:eu-repo/semantics/publishedVersio

Effect of exposure to electron beam irradiation in biopolymer papain and their electrical behaviour

33-38The obtention of biopolymer papain irradiated with 8 MeV energy of electron beam to different doses from 1 kGy to 10 kGy and the effect of the radiation on the electrical behaviour of the biopolymer have been investigated in the temperature range 29°-135<span style="font-family:Symbol;mso-ascii-font-family: " times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB">°C. The <i style="mso-bidi-font-style: normal">ac impedance plots indicate a single relaxation process in biopolymer papain in different temperatures. An increase in bulk electrical conductivity was noted for biopolymer papain with temperature after irradiation which is related to the hopping of charge carriers between the sites. The electrical conductivity of fresh and irradiated papain follows the universal power law and from which it is observed that the <i style="mso-bidi-font-style: normal">ac conductivity is frequency dependent and it obeys the electron tunneling model of conduction mechanism. The SEM images reveal the larger particle size with non-uniform structure upon irradiation of papain. </span

Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved