On the complemented subspaces of the Schreier spaces

It is shown that the Schreier space X admits a set of continuum cardinality whose elements are mutually incomparable complemented subspaces spanned by subsequences of the natural Schauder basis of X.Comment: 26 pages, AMS-LaTe

A rocket-borne pulse-height analyzer for energetic particle measurements

The pulse-height analyzer basically resembles a time-sharing multiplexing data-acquisition system which acquires analog data (from energetic particle spectrometers) and converts them into digital code. The PHA simultaneously acquires pulse-height information from the analog signals of the four input channels and sequentially multiplexes the digitized data to a microprocessor. The PHA together with the microprocessor form an on-board real-time data-manipulation system. The system processes data obtained during the rocket flight and reduces the amount of data to be sent back to the ground station. Consequently the data-reduction process for the rocket experiments is speeded up. By using a time-sharing technique, the throughput rate of the microprocessor is increased. Moreover, data from several particle spectrometers are manipulated to share one information channel; consequently, the TM capacity is increased

Microcrystalline silicon growth for heterojunction solar cells

Microcrystalline Si (m-Si) films with a 1.7eV energy bandgap and crystal size of several hundred A were e-beam evaporated on single crystalline Si (c-Si) to form a heterojunction with the substrate, or a window layer to a single crystalline p-n junction (heteroface structure). The goal was to enhance Voc by such uses of the larger bandgap m-Si, with the intriguing prospect of forming heterostructures with exact lattice match on each layer. The heterojunction structure was affected by interface and shunting problems and the best Voc achieved was only 482mV, well below that of single crystal Si homojunctions. The heteroface structure showed promise for some of the samples with p m-Si/p-n structure (the complementary structure did not show any improvement). Although several runs with different deposition conditions were run, the results were inconsistent. Any Voc enhancement obtained was too small to compensate for the current loss due to the extra absorption and poor carrier transport properties of the m-Si film

Silicon solar cell process development, fabrication, and analysis

Two large cast ingots were evaluated. Solar cell performance versus substrate position within the ingots was obtained and the results are presented. Dendritic web samples were analyzed in terms of structural defects, and efforts were made to correlate the data with the performance of solar cells made from the webs

New geometries for high spatial resolution hall probes

The Hall response function of symmetric and asymmetric planar Hall effect devices is investigated by scanning a magnetized tip above a sensor surface while simultaneously recording the topography and the Hall voltage. Hall sensor geometries are tailored using a Focused Ion Beam, in standard symmetric and new asymmetric geometries. With this technique we are able to reduce a single voltage probe to a narrow constriction 20 times smaller than the other device dimensions. We show that the response function is peaked above the constriction, in agreement with numerical simulations. The results suggest a new way to pattern Hall sensors for enhanced spatial resolution.Comment: 12 pages, 5 figures, submitted to Journal of Applied Physic

Silicon solar cell process development, fabrication and analysis

Solar cells were fabricated from EFG ribbons dendritic webs, cast ingots by heat exchanger method, and cast ingots by ubiquitous crystallization process. Baseline and other process variations were applied to fabricate solar cells. EFG ribbons grown in a carbon-containing gas atmosphere showed significant improvement in silicon quality. Baseline solar cells from dendritic webs of various runs indicated that the quality of the webs under investigation was not as good as the conventional CZ silicon, showing an average minority carrier diffusion length of about 60 um versus 120 um of CZ wafers. Detail evaluation of large cast ingots by HEM showed ingot reproducibility problems from run to run and uniformity problems of sheet quality within an ingot. Initial evaluation of the wafers prepared from the cast polycrystalline ingots by UCP suggested that the quality of the wafers from this process is considerably lower than the conventional CZ wafers. Overall performance was relatively uniform, except for a few cells which showed shunting problems caused by inclusions

On the capacities of bipartite Hamiltonians and unitary gates

We consider interactions as bidirectional channels. We investigate the capacities for interaction Hamiltonians and nonlocal unitary gates to generate entanglement and transmit classical information. We give analytic expressions for the entanglement generating capacity and entanglement-assisted one-way classical communication capacity of interactions, and show that these quantities are additive, so that the asymptotic capacities equal the corresponding 1-shot capacities. We give general bounds on other capacities, discuss some examples, and conclude with some open questions.Comment: V3: extensively rewritten. V4: a mistaken reference to a conjecture by Kraus and Cirac [quant-ph/0011050] removed and a mistake in the order of authors in Ref. [53] correcte

Study program for encapsulation materials interface for low-cost solar array

The service integrity of the bonded interface in solar cell modules used in solar arrays is addressed. The development of AC impedance as a nondestructive evaluation (NDE) methodology for solar arrays is reported along with development of corrosion models and materials selection criteria for corrosion resistant interfaces

Plasma-driven catalysis process for toluene abatement: Effect of water vapor

Plasma-driven catalysis (PDC) was used to remove toluene in air. Water vapor is a critical operating parameter in this process. Its effect on toluene removal efficiency, carbon balance, CO 2 selectivity, and outlet O 3 concentration was systematically investigated. Results showed that water vapor imposed negative effect on toluene decomposition since it depressed the formation and catalytic decomposition of O 3. Water vapor deposited on the catalyst would cover the catalytic active sites, resulting in the deactivation of the catalyst. There was an optimum water vapor content for the highest carbon balance and CO 2 selectivity. The present paper sheds some insight into the effect of water vapor and provides a valuable basis for the application of the PDC technology. © 2010 IEEE.published_or_final_versio

Abatement of toluene in the plasma-driven catalysis: Mechanism and reaction kinetics

The mechanism and reaction kinetics of toluene destruction in a plasma-driven catalysis (PDC) system were studied. The results show that the toluene removal efficiency (TRE) is greatly increased while the level of O 3 by-product is significantly reduced in PDC as compared with that in nonthermal plasma (NTP). The rate constant of toluene destruction in the PDC is more than twice than that in NTP. Among the multiple reactive species responsible for toluene destruction in the PDC, hydroxyl radicals (̇OH) had a small contribution, whereas energetic electrons and atomic oxygen (O) were the most important. The enhanced performance of toluene destruction by PDC was mainly due to greater amounts of O formed during the process. The catalysts improved toluene destruction by catalytic decomposition of O 3 and generation of O. Essentially, better toluene abatement can be achieved by focusing on the increased energy density and improved performance of the catalyst for O 3 decomposition. © 2006 IEEE.published_or_final_versio