Gated combo nanodevice for sequential operations on single electron spin

An idea for a nanodevice in which an arbitrary sequence of three basic quantum single qubit gates - negation, Hadamard and phase shift - can be performed on a single electron spin. The spin state is manipulated using the spin-orbit coupling and the electron trajectory is controlled by the electron wave function self-focusing mechanism due to the electron interaction with the charge induced on metal gates. We present results of simulations based on iterative solution of the time dependent Schr\"odinger equation in which the subsequent operations on the electron spin can be followed and controlled. Description of the moving electron wave packet requires evaluation of the electric field within the entire nanodevice in each time step

Spin rotations induced by electron running on closed trajectories in gated semiconductor nanodevices

A design for a quantum gate performing transformations of a single electron spin is presented. The spin rotations are performed by the electron going around the closed loops in a gated semiconductor device. We demonstrate the operation of NOT, phase-flip and Hadamard quantum gates, i.e. the single-qubit gates which are most commonly used in the algorithms. The proposed devices employ the self-focusing effect for the electron wave packet interacting with the electron gas on the electrodes and the Rashba spin-orbit coupling. Due to the self-focusing effect the electron moves in a compact wave packet. The spin-orbit coupling translates the spatial motion of the electron into the rotations of the spin. The device does not require microwave radiation and operates using low constant voltages. It is therefore suitable for selective single-spin rotations in larger registers.Comment: submitte

Effect of electrical bias on spin transport across a magnetic domain wall

We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.Comment: 11 pages, 3 figure

Decoherence of localized spins interacting via RKKY interaction

We theoretically study decoherence of two localized spins interacting via the RKKY interaction in one-, two-, and three-dimensional electron gas. We derive the kinetic equation for the reduced density matrix of the localized spins and show that energy relaxation caused by singlet-triplet transition is suppressed when the RKKY interaction is ferromagnetic. We also estimate the decoherence time of the system consisting of two quantum dots embedded in a two dimensional electron gas.Comment: 4pages, 2figure

Resonant harmonic generation and collective spin rotations in electrically driven quantum dots

Spin rotations induced by an AC electric field in a two-electron double quantum dot are studied by an exact numerical solution of the time dependent Schroedinger equation in the context of recent electric dipole spin resonance experiments based on the Pauli blockade. We demonstrate that the splitting of the main resonance line by the spin exchange coupling is accompanied by the appearance of fractional resonances and that both these effects are triggered by interdot tunnel coupling. We find that the AC driven system generates residual but distinct harmonics of the driving frequency which are amplified when tuned to the main transition frequency. The mechanism is universal for electron systems in electrically driven potentials and works also in the absence of electron-electron interaction or spin-orbit coupling.Comment: Corrected version accepted for PR

Spin Exciton in quantum dot with spin orbit coupling in high magnetic field

Coulomb interactions of few ($N$) electrons confined in a disk shaped quantum dot, with a large magnetic field $B=B^*$ applied in the z-direction (orthogonal to the dot), produce a fully spin polarized ground state. We numerically study the splitting of the levels corresponding to the multiplet of total spin $S=N/2$ (each labeled by a different total angular momentum $J_z$) in presence of an electric field parallel to $B$, coupled to $S$ by a Rashba term. We find that the first excited state is a spin exciton with a reversed spin at the origin. This is reminiscent of the Quantum Hall Ferromagnet at filling one which has the skyrmion-like state as its first excited state. The spin exciton level can be tuned with the electric field and infrared radiation can provide energy and angular momentum to excite it.Comment: 9 pages, 9 figures. submitted to Phys.Rev.

Thermally Activated Resonant Magnetization Tunneling in Molecular Magnets: Mn_12Ac and others

The dynamical theory of thermally activated resonant magnetization tunneling in uniaxially anisotropic magnetic molecules such as Mn_12Ac (S=10) is developed.The observed slow dynamics of the system is described by master equations for the populations of spin levels.The latter are obtained by the adiabatic elimination of fast degrees of freedom from the density matrix equation with the help of the perturbation theory developed earlier for the tunneling level splitting [D. A. Garanin, J. Phys. A, 24, L61 (1991)]. There exists a temperature range (thermally activated tunneling) where the escape rate follows the Arrhenius law, but has a nonmonotonic dependence on the bias field due to tunneling at the top of the barrier. At lower temperatures this regime crosses over to the non-Arrhenius law (thermally assisted tunneling). The transition between the two regimes can be first or second order, depending on the transverse field, which can be tested in experiments. In both regimes the resonant maxima of the rate occur when spin levels in the two potential wells match at certain field values. In the thermally activated regime at low dissipation each resonance has a multitower self-similar structure with progressively narrowing peaks mounting on top of each other.Comment: 18 pages, 8 figure

Quantum-Classical Transition of the Escape Rate of a Uniaxial Spin System in an Arbitrarily Directed Field

The escape rate \Gamma of the large-spin model described by the Hamiltonian H = -DS_z^2 - H_zS_z - H_xS_x is investigated with the help of the mapping onto a particle moving in a double-well potential U(x). The transition-state method yields $\Gamma$ in the moderate-damping case as a Boltzmann average of the quantum transition probabilities. We have shown that the transition from the classical to quantum regimes with lowering temperature is of the first order (d\Gamma/dT discontinuous at the transition temperature T_0) for h_x below the phase boundary line h_x=h_{xc}(h_z), where h_{x,z}\equiv H_{x,z}/(2SD), and of the second order above this line. In the unbiased case (H_z=0) the result is h_{xc}(0)=1/4, i.e., one fourth of the metastability boundary h_{xm}=1, at which the barrier disappears. In the strongly biased limit \delta\equiv 1-h_z << 1, one has h_{xc} \cong (2/3)^{3/4}(\sqrt{3}-\sqrt{2})\delta^{3/2}\cong 0.2345 \delta^{3/2}, which is about one half of the boundary value h_{xm} \cong (2\delta/3)^{3/2} \cong 0.5443 \delta^{3/2}.The latter case is relevant for experiments on small magnetic particles, where the barrier should be lowered to achieve measurable quantum escape rates.Comment: 17 PR pages, 16 figures; published versio

Fabry-Perot interference and spin filtering in carbon nanotubes

We study the two-terminal transport properties of a metallic single-walled carbon nanotube with good contacts to electrodes, which have recently been shown [W. Liang et al, Nature 441, 665-669 (2001)] to conduct ballistically with weak backscattering occurring mainly at the two contacts. The measured conductance, as a function of bias and gate voltages, shows an oscillating pattern of quantum interference. We show how such patterns can be understood and calculated, taking into account Luttinger liquid effects resulting from strong Coulomb interactions in the nanotube. We treat back-scattering in the contacts perturbatively and use the Keldysh formalism to treat non-equilibrium effects due to the non-zero bias voltage. Going beyond current experiments, we include the effects of possible ferromagnetic polarization of the leads to describe spin transport in carbon nanotubes. We thereby describe both incoherent spin injection and coherent resonant spin transport between the two leads. Spin currents can be produced in both ways, but only the latter allow this spin current to be controlled using an external gate. In all cases, the spin currents, charge currents, and magnetization of the nanotube exhibit components varying quasiperiodically with bias voltage, approximately as a superposition of periodic interference oscillations of spin- and charge-carrying ``quasiparticles'' in the nanotube, each with its own period. The amplitude of the higher-period signal is largest in single-mode quantum wires, and is somewhat suppressed in metallic nanotubes due to their sub-band degeneracy.Comment: 12 pages, 6 figure