Advances in imaging THGEM-based detectors

The thick GEM (THGEM) [1] is an "expanded" GEM, economically produced in the PCB industry by simple drilling and etching in G-10 or other insulating materials (fig. 1). Similar to GEM, its operation is based on electron gas avalanche multiplication in sub-mm holes, resulting in very high gain and fast signals. Due to its large hole size, the THGEM is particularly efficient in transporting the electrons into and from the holes, leading to efficient single-electron detection and effective cascaded operation. The THGEM provides true pixilated radiation localization, ns signals, high gain and high rate capability. For a comprehensive summary of the THGEM properties, the reader is referred to [2, 3]. In this article we present a summary of our recent study on THGEM-based imaging, carried out with a 10x10 cm^2 double-THGEM detector.Comment: 3 pages, 3 figures. Presented at the 10th Pisa Meeting on Advanced Detectors; ELBA-Italy; May 21-27 200

Vertex Fault Tolerant Additive Spanners

A {\em fault-tolerant} structure for a network is required to continue functioning following the failure of some of the network's edges or vertices. In this paper, we address the problem of designing a {\em fault-tolerant} additive spanner, namely, a subgraph $H$ of the network $G$ such that subsequent to the failure of a single vertex, the surviving part of $H$ still contains an \emph{additive} spanner for (the surviving part of) $G$, satisfying $dist(s,t,H\setminus \{v\}) \leq dist(s,t,G\setminus \{v\})+\beta$ for every $s,t,v \in V$. Recently, the problem of constructing fault-tolerant additive spanners resilient to the failure of up to $f$ \emph{edges} has been considered by Braunschvig et. al. The problem of handling \emph{vertex} failures was left open therein. In this paper we develop new techniques for constructing additive FT-spanners overcoming the failure of a single vertex in the graph. Our first result is an FT-spanner with additive stretch $2$ and $\widetilde{O}(n^{5/3})$ edges. Our second result is an FT-spanner with additive stretch $6$ and $\widetilde{O}(n^{3/2})$ edges. The construction algorithm consists of two main components: (a) constructing an FT-clustering graph and (b) applying a modified path-buying procedure suitably adopted to failure prone settings. Finally, we also describe two constructions for {\em fault-tolerant multi-source additive spanners}, aiming to guarantee a bounded additive stretch following a vertex failure, for every pair of vertices in $S \times V$ for a given subset of sources $S\subseteq V$. The additive stretch bounds of our constructions are 4 and 8 (using a different number of edges)

Ion-induced effects in GEM & GEM/MHSP gaseous photomultipliers for the UV and the visible spectral range

We report on the progress in the study of cascaded GEM and GEM/MHSP gas avalanche photomultipliers operating at atmospheric pressure, with CsI and bialkali photocathodes. They have single-photon sensitivity, ns time resolution and good localization properties. We summarize operational aspects and results, with the highlight of a high-gain stable gated operation of a visible-light device. Of particular importance are the results of a recent ion-backflow reduction study in different cascaded multipliers, affecting the detector's stability and the photocathode's liftime. We report on the significant progress in ion-blocking and provide first results on bialkali-photocathode aging under gas multiplication.Comment: 6 pages, 8 figure

Sparse Fault-Tolerant BFS Trees

This paper addresses the problem of designing a sparse {\em fault-tolerant} BFS tree, or {\em FT-BFS tree} for short, namely, a sparse subgraph $T$ of the given network $G$ such that subsequent to the failure of a single edge or vertex, the surviving part $T'$ of $T$ still contains a BFS spanning tree for (the surviving part of) $G$. Our main results are as follows. We present an algorithm that for every $n$-vertex graph $G$ and source node $s$ constructs a (single edge failure) FT-BFS tree rooted at $s$ with O(n \cdot \min\{\Depth(s), \sqrt{n}\}) edges, where \Depth(s) is the depth of the BFS tree rooted at $s$. This result is complemented by a matching lower bound, showing that there exist $n$-vertex graphs with a source node $s$ for which any edge (or vertex) FT-BFS tree rooted at $s$ has $\Omega(n^{3/2})$ edges. We then consider {\em fault-tolerant multi-source BFS trees}, or {\em FT-MBFS trees} for short, aiming to provide (following a failure) a BFS tree rooted at each source $s\in S$ for some subset of sources $S\subseteq V$. Again, tight bounds are provided, showing that there exists a poly-time algorithm that for every $n$-vertex graph and source set $S \subseteq V$ of size $\sigma$ constructs a (single failure) FT-MBFS tree $T^*(S)$ from each source $s_i \in S$, with $O(\sqrt{\sigma} \cdot n^{3/2})$ edges, and on the other hand there exist $n$-vertex graphs with source sets $S \subseteq V$ of cardinality $\sigma$, on which any FT-MBFS tree from $S$ has $\Omega(\sqrt{\sigma}\cdot n^{3/2})$ edges. Finally, we propose an $O(\log n)$ approximation algorithm for constructing FT-BFS and FT-MBFS structures. The latter is complemented by a hardness result stating that there exists no $\Omega(\log n)$ approximation algorithm for these problems under standard complexity assumptions

Thick GEM-like hole multipliers: properties and possible applications

The properties of thick GEM-like (TGEM) gaseous electron multipliers, operated at 1-740 Torr are presented. They are made of a G-10 plate, perforated with millimeter-scale diameter holes. In single-multiplier elements, effective gains of about 104, 106, and 105 were reached at respective pressures of 1, 10 Torr isobutane and 740 Torr Ar/5%CH4, with pulse rise-times in the few nanosecond scale. The high effective gain at atmospheric pressure was measured with a TGEM coated with a CsI photocathode. The detector was operated in single and cascaded modes. Potential applications in ion and photon detection are discussed.Comment: Contribution to the 2004 Vienna Conference on Instrumentatio

Path-Fault-Tolerant Approximate Shortest-Path Trees

Let $G=(V,E)$ be an $n$-nodes non-negatively real-weighted undirected graph. In this paper we show how to enrich a {\em single-source shortest-path tree} (SPT) of $G$ with a \emph{sparse} set of \emph{auxiliary} edges selected from $E$, in order to create a structure which tolerates effectively a \emph{path failure} in the SPT. This consists of a simultaneous fault of a set $F$ of at most $f$ adjacent edges along a shortest path emanating from the source, and it is recognized as one of the most frequent disruption in an SPT. We show that, for any integer parameter $k \geq 1$, it is possible to provide a very sparse (i.e., of size $O(kn\cdot f^{1+1/k})$) auxiliary structure that carefully approximates (i.e., within a stretch factor of $(2k-1)(2|F|+1)$) the true shortest paths from the source during the lifetime of the failure. Moreover, we show that our construction can be further refined to get a stretch factor of $3$ and a size of $O(n \log n)$ for the special case $f=2$, and that it can be converted into a very efficient \emph{approximate-distance sensitivity oracle}, that allows to quickly (even in optimal time, if $k=1$) reconstruct the shortest paths (w.r.t. our structure) from the source after a path failure, thus permitting to perform promptly the needed rerouting operations. Our structure compares favorably with previous known solutions, as we discuss in the paper, and moreover it is also very effective in practice, as we assess through a large set of experiments.Comment: 21 pages, 3 figures, SIROCCO 201

Further progress in ion back-flow reduction with patterned gaseous hole-multipliers

A new idea on electrostatic deviation and capture of back-drifting avalanche-ions in cascaded gaseous hole-multipliers is presented. It involves a flipped reversed-bias Micro-Hole & Strip Plate (F-R-MHSP) element, the strips of which are facing the drift region of the multiplier. The ions, originating from successive multiplication stages, are efficiently deviated and captured by such electrode. Experimental results are provided comparing the ion-blocking capability of the F-R-MHSP to that of the reversed-bias Micro-Hole & Strip Plate (R-MHSP) and the Gas Electron Multiplier (GEM). Best ion-blocking results in cascaded hole-multipliers were reached with a detector having the F-R-MHSP as the first multiplication element. A three-element F-R-MHSP/GEM/MHSP cascaded multiplier operated in atmospheric-pressure Ar/CH4 (95/5), at total gain of ~10^{5}, yielded ion back-flow fractions of 3*10^{-4} and 1.5*10^{-4}, at drift fields of 0.5 and 0.2 kV/cm, respectively. We describe the F-R-MHSP concept and the relevance of the obtained ion back-flow fractions to various applications; further ideas are also discussed.Comment: 17 pages, 11 figures, published in JINS