Electronic structure of the muonium center as a shallow donor in ZnO

The electronic structure and the location of muonium centers (Mu) in single-crystalline ZnO were determined for the first time. Two species of Mu centers with extremely small hyperfine parameters have been observed below 40 K. Both Mu centers have an axial-symmetric hyperfine structure along with a [0001] axis, indicating that they are located at the AB_{O,//} and BC_{//} sites. It is inferred from their small ionization energy (~6 meV and 50 meV) and hyperfine parameters (~10^{-4} times the vacuum value) that these centers behave as shallow donors, strongly suggesting that hydrogen is one of the primary origins of n type conductivity in as-grown ZnO.Comment: 4 pages, 4 figures, submitted to PR

A novel high dynamic six phase 120 kW Power Hardware in the Loop Emulation Test Bench for emulating AC/DC Grids and Electrical Machines

This paper presents a highly customizable 120kVA Power-Hardware-in-the-Loop test bench. The output stage consist of two identical Parallel Hybrid Converters each with a 17-level output voltage and an effective switching frequency of 1MHz. The Parallel Hybrid Converters can provide 3-phase AC or bipolar DC as output voltage. Thus, one 6-AC, 3-AC or DC system or two systems with 2x3-AC, 1x3-AC and 1xDC or 2xDC can be emulated

A novel high dynamic six phase 120 kW Power Hardware in the Loop Emulation Test Bench for emulating AC/DC Grids and Electrical Machines

This paper presents a highly customizable 120kVA Power-Hardware-in-the-Loop test bench. The output stage consist of two identical Parallel Hybrid Converters each with a 17-level output voltage and an effective switching frequency of 1MHz. The Parallel Hybrid Converters can provide 3-phase AC or bipolar DC as output voltage. Thus, one 6-AC, 3-AC or DC system or two systems with 2x3-AC, 1x3-AC and 1xDC or 2xDC can be emulated

Generation of spin currents via Raman scattering

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement

Spin relaxation of conduction electrons in bulk III-V semiconductors

Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each spin relaxation mechanism is compared and the diagrams showing the dominant mechanism are constructed as a function of temperature and impurity concentrations. Our approach is based upon theoretical calculation of the momentum relaxation rate and allows understanding of the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.Comment: an error in earlier version correcte

The motor function measure to study limitation of activity in children and adults with Charcot-Marie-Tooth disease

AbstractObjectiveTo study the applicability and responsiveness of the motor function measure (total score and sub-scores D1, D2 and D3) in patients with Charcot-Marie-Tooth disease.Patients and methodsTwo hundred and thirty-three patients aged 4–86 years were included in the descriptive study. Scores and sub-scores were analyzed by age and by disease subtypes. Sensitivity to change (responsiveness) was estimated in patients having had at least two evaluations with at least six months between the first and the second.ResultsMotor function measure scores decrease with age, especially sub-scores D1 and D3. There were no significant differences between the scores according to type of Charcot-Marie-Tooth disease. The scores were significantly higher for ambulatory than for non-ambulatory patients. Significant responsiveness was demonstrated only in type 2 Charcot-Marie-Tooth disease.Discussion/conclusionsOur results suggest that, especially for D1 and D3 sub-scores, the motor function measure is a reliable and valid outcome measure that can be usefully applied in longitudinal follow-up. Studies of longer duration could demonstrate its responsiveness in other Charcot-Marie-Tooth disease subtypes

Gallium transformation under femtosecond laser excitation: Phase coexistence and incomplete melting

The reversible phase transition induced by femtosecond laser excitation of Gallium has been studied by measuring the dielectric function at 775 nm with ~ 200 fs temporal resolution. The real and imaginary parts of the transient dielectric function were calculated from absolute reflectivity of Gallium layer measured at two different angles of incidence, using Fresnel formulas. The time-dependent electron-phonon effective collision frequency, the heat conduction coefficient and the volume fraction of a new phase were restored directly from the experimental data, and the time and space dependent electron and lattice temperatures in the layer undergoing phase transition were reconstructed without ad hoc assumptions. We converted the temporal dependence of the electron-phonon collision rate into the temperature dependence, and demonstrated, for the first time, that the electron-phonon collision rate has a non-linear character. This temperature dependence converges into the known equilibrium function during the cooling stage. The maximum fraction of a new phase in the laser-excited Gallium layer reached only 60% even when the deposited energy was two times the equilibrium enthalpy of melting. We have also demonstrated that the phase transition pace and a fraction of the transformed material depended strongly on the thickness of the laser-excited Gallium layer, which was of the order of several tens of nanometers for the whole range of the pump laser fluencies up to the damage threshold. The kinetics of the phase transformation after the laser excitation can be understood on the basis of the classical theory of the first-order phase transition while the duration of non-thermal stage appears to be comparable to the sub-picosecond pulse length.Comment: 28 pages, including 9 figs. Submitted to Phys. Rev. B 14 March 200

First-principles study of the phonon-limited mobility in n-type single-layer MoS2

In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon interaction, the deformation potentials and Fr\"ohlich interaction in the isolated MoS2 layer are determined. We find that the calculated room-temperature mobility of ~410 cm^2 V^-1 s^-1 is dominated by optical phonon scattering via deformation potential couplings and the Fr\"ohlich interaction with the deformation potentials to the intravalley homopolar and intervalley longitudinal optical phonons given by 4.1 x 10^8 eV/cm and 2.6 x 10^8 eV/cm, respectively. The mobility is weakly dependent on the carrier density and follows a \mu ~ T^-1 temperature dependence with \gamma = 1.69 at room temperature. It is shown that a quenching of the characteristic homopolar mode which is likely to occur in top-gated samples, boosts the mobility with 70 cm^2 V^-1 s^-1 and can be observed as a decrease in the exponent to \gamma = 1.52. Our findings indicate that the intrinsic phonon-limited mobility is approached in samples where a high-kappa dielectric that effectively screens charge impurities is used as gate oxide.Comment: Submitted to Phys. Rev.

Burns disasters - a plan for South Africa

The need for a burns disaster plan integrated with national and provincial disaster plans was highlighted during the South African Burns Society Congress in Pretoria in 2009. In recent times, a fire at a large printing works in Paarl and a nightclub in Durban, and bush fires around Cape Town, have questioned both the prevention strategies and our preparedness to cope with the potential number of burn casualties. The likelihood of a burns disaster increases when large numbers of people are gathered in an environment where powerful sources of energy are harnessed in industry or where there has been a significant growth in transportation and technology. Acts of terrorism have highlighted the need for national disaster plans in all countries. The Australian Burns Disaster Plan (Ausburnplan), for instance, was drawn up in the aftermath of the Bali catastrophe. Analysis of major terrorist attacks has revealed that up to 15% of the total live casualties sustained severe burn injuries; but the arrival of even 10 new major burns would overwhelm most burns units in South Africa. The International Society for Burns Injuries (ISBI) guidelines for the management of large numbers of burns casualties recommend that ‘each country has or should have a disaster planning system that addresses its own particular needs.’ The essential elements of any disaster plan are descriptions of how medical facilities should provide appropriate treatment, and how to ensure access to such facilities. The South African Burns Society (SABS) should assist in evaluating these facilities, help to maintain standards, and formulate and implement provincial and national burns disaster plans