395 research outputs found
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Know Your Enemy: Applying Cognitive Modeling in Security Domain
Game Theory -based decision aids have been successfully em-ployed in real-world policing, anti-terrorism, and wildlife con-servation efforts (Tambe, Jiang, An, & Jain, 2013). Cognitivemodeling, in concert with model tracing and dynamic parame-ter fitting techniques, may be used to improve the performanceof such decision aids by predicting individual attacker behav-ior in repeated security games. We present three simulations,showing that (1) cognitive modeling can aid in greatly improv-ing decision-aid performance in the security domain; and (2)despite the fact that individual attackers will differ in initialpreferences and in how they learn, model parameters can beadjusted dynamically to make useful predictions for each at-tacker
Radiation Pressure Dominate Regime of Relativistic Ion Acceleration
The electromagnetic radiation pressure becomes dominant in the interaction of
the ultra-intense electromagnetic wave with a solid material, thus the wave
energy can be transformed efficiently into the energy of ions representing the
material and the high density ultra-short relativistic ion beam is generated.
This regime can be seen even with present-day technology, when an exawatt laser
will be built. As an application, we suggest the laser-driven heavy ion
collider.Comment: 10 pages, 4 figure
Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
We report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3665033
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Spatial and temporal variability of HfOx-based resistive random access memory
(RRAM) are investigated for manufacturing and product designs. Manufacturing
variability is characterized at different levels including lots, wafers, and
chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write
cycle resistance statistics. Using the electrical in-line-test cycle data, a
method is developed to derive BERs as functions of the design margin, to
provide guidance for technology evaluation and product design. The proposed BER
calculation can also be used in the off-line bench test and build-in-self-test
(BIST) for adaptive error correction and for the other types of random access
memories.Comment: 4 pages. Memory Workshop (IMW), 2015 IEEE Internationa
Iterative graph cuts for image segmentation with a nonlinear statistical shape prior
Shape-based regularization has proven to be a useful method for delineating
objects within noisy images where one has prior knowledge of the shape of the
targeted object. When a collection of possible shapes is available, the
specification of a shape prior using kernel density estimation is a natural
technique. Unfortunately, energy functionals arising from kernel density
estimation are of a form that makes them impossible to directly minimize using
efficient optimization algorithms such as graph cuts. Our main contribution is
to show how one may recast the energy functional into a form that is
minimizable iteratively and efficiently using graph cuts.Comment: Revision submitted to JMIV (02/24/13
Mitigating switching variability in carbon nanotube memristors
Root-cause of instability in carbon nanotubes memristors is analyzed employing ultra-short pulse technique in combination with atomic-level material modeling. Separating various factors affecting switching operations allowed to identify structural features and operational conditions leading to improved cell characteristics
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Resonant frequencies of the two-dimensional plasma in FETs increase with the
reduction of the channel dimensions and can reach the THz range for sub-micron
gate lengths. Nonlinear properties of the electron plasma in the transistor
channel can be used for the detection and mixing of THz frequencies. At
cryogenic temperatures resonant and gate voltage tunable detection related to
plasma waves resonances, is observed. At room temperature, when plasma
oscillations are overdamped, the FET can operate as an efficient broadband THz
detector. We present the main theoretical and experimental results on THz
detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape
Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures
Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications
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