Structural health monitoring (SHM) for composite structure undergoing tensile and thermal testing

Application of ultrasonic guided waves generated by piezoelectric smart transducers has become one of the widely-used techniques in structural health monitoring. This technique has led to significant improvements and profound effects in the field of aircraft reliability and safety. Lamb wave propagation on composite plate-like structure undergoing mechanical testing is investigated in the paper. Smart PZT actuator/sensor is bonded on the carbon-fiber and glassfiber epoxy composites, which are subjected to tensile and thermal stress tests. The acquired results indicate the changes in scattering waves in composites materials due to the applied thermal and tensile force. Wavelet analysis was incorporated in this research work in order to distinguish different structural status

High-Performance Air-Stable n-Type Carbon Nanotube Transistors with Erbium Contacts

O ver the past few decades, the continued down-scaling of the physical dimensions of silicon field-effect transistors (FETs) has been the main drive for achieving higher device density while improving the transistor performance in complementary metalÀoxideÀ semiconductor (CMOS) circuits. One of the principle benefits of the conventional scaling trend, namely, reducing the power consumption per computation, has diminished in recent years. In particular, power management is increasingly becoming a major challenge because of the inability to further decrease the operating voltage without compromising the performance of silicon FETs. Incorporation of alternative channel materials with superior carrier transport properties, as presently conceived, is a favorable strategy for the semiconductor industry to complement or replace silicon FETs. Among the promising candidates, carbon nanotubes (CNTs) are predicted to offer the most energy-efficient solution for computation compared with other channel materials, 1 owing to their unique properties such as ultrathin body and ballistic carrier transport in the channel. ABSTRACT So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals ; erbium, lanthanum, and yttrium ; are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation

How to Report and Benchmark Emerging Field-Effect Transistors

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.Comment: 15 pages, 3 figures, Under review at Nature Electronic

Steady-State Thermal Analysis of Functionally Graded Rotating Disks Using Finite Element and Analytical Methods

A steady-state thermal analysis for a hollow and axisymmetric functionally graded (FG) rotating disk with a uniform thickness was performed in this study. In the studied FG disk, metal and ceramic materials were considered for the inner and outer surfaces, respectively, when the material properties varied along the radial direction but not through material thickness variations. A power law distribution was employed to represent the material properties. Three different methods were used to present the temperature distribution along the radial direction of the FG disk, namely (1) an in-house finite element (FE) program, (2) the ANSYS parametric design language (APDL), and (3) an analytical solution. Furthermore, the in-house FE program presented the thermal stress and thermal strain of the FG disk. The weighted residual method in the FEM was used to present the temperature distribution when the material properties along an element are varying in contrast with using a commercial finite element software when the material properties are constant within an element to simulate FGMs. The accuracy of the in-house FE program was tested, and it was shown that the temperature distributions obtained by using the abovementioned methods were exactly the same. A parametric material gradation study was performed to understand the effects on the temperature, thermal strain, and stress. The material gradation was found to have a significant effect in this regard. The in-house finite element program enables one to perform a post-processing analysis in a more efficient and convenient manner than that through simulations in a finite element software program such as ANSYS. Lastly, this in-house code can be used to perform an optimization analysis to minimize the thermal strain and stress while the stiffness of the plate is maintained when the material properties within an element vary

Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency

The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistencyhysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain–source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle