Silicon solar cell process development, fabrication and analysis

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap

On the complemented subspaces of the Schreier spaces

It is shown that the Schreier space X admits a set of continuum cardinality whose elements are mutually incomparable complemented subspaces spanned by subsequences of the natural Schauder basis of X.Comment: 26 pages, AMS-LaTe

New geometries for high spatial resolution hall probes

The Hall response function of symmetric and asymmetric planar Hall effect devices is investigated by scanning a magnetized tip above a sensor surface while simultaneously recording the topography and the Hall voltage. Hall sensor geometries are tailored using a Focused Ion Beam, in standard symmetric and new asymmetric geometries. With this technique we are able to reduce a single voltage probe to a narrow constriction 20 times smaller than the other device dimensions. We show that the response function is peaked above the constriction, in agreement with numerical simulations. The results suggest a new way to pattern Hall sensors for enhanced spatial resolution.Comment: 12 pages, 5 figures, submitted to Journal of Applied Physic

Lifetime and polarization of the radiative decay of excitons, biexcitons and trions in CdSe nanocrystal quantum dots

Using the pseudopotential configuration-interaction method, we calculate the intrinsic lifetime and polarization of the radiative decay of single excitons (X), positive and negative trions (X+ and X−), and biexcitons (XX) in CdSe nanocrystal quantum dots. We investigate the effects of the inclusion of increasingly more complex many-body treatments, starting from the single-particle approach and culminating with the configuration-interaction scheme. Our configuration-interaction results for the size dependence of the single-exciton radiative lifetime at room temperature are in excellent agreement with recent experimental data. We also find the following. (i) Whereas the polarization of the bright exciton emission is always perpendicular to the hexagonal c axis, the polarization of the dark exciton switches from perpendicular to parallel to the hexagonal c axis in large dots, in agreement with experiment. (ii) The ratio of the radiative lifetimes of mono- and biexcitons (X):(XX) is ~1:1 in large dots (R=19.2 Å). This ratio increases with decreasing nanocrystal size, approaching 2 in small dots (R=10.3 Å). (iii) The calculated ratio (X+):(X−) between positive and negative trion lifetimes is close to 2 for all dot sizes considered