Indium And Gallium P-type Doping Of Hydrogenated Amorphous Germanium Thin Films

Hydrogenated amorphous germanium films have been p-type doped with indium and gallium. The room-temperature dark dc conductivity of the films has been found to change by several orders of magnitude within the studied dopant atomic concentration range (∼3×10 -5 to ∼1×10 -2). The conductivity change from n to p type for the more heavily doped materials indicates effective p-type doping. The hydrogen content and the optical gap of the doped films, on the other hand, remain essentially unchanged with respect to the undoped material. For the most doped samples, signs of metallic segregation have been detected in the case of gallium doping. Metallic segregation is not apparent for indium-doped samples.64243273327

INDIUM AND GALLIUM P-TYPE DOPING OF HYDROGENATED AMORPHOUS-GERMANIUM THIN-FILMS

Hydrogenated amorphous germanium films have been p-type doped with indium and gallium. The room-temperature dark dc conductivity of the films has been found to change by several orders of magnitude within the studied dopant atomic concentration range (approximately 3 X 10(-5) to approximately 1 X 10(-2)). The conductivity change from n to p type for the more heavily doped materials indicates effective p-type doping. The hydrogen content and the optical gap of the doped films, on the other hand, remain essentially unchanged with respect to the undoped material. For the most doped samples, signs of metallic segregation have been detected in the case of gallium doping. Metallic segregation is not apparent for indium-doped samples.64243273327

ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERING YIELD RATIOS USING COSPUTTERING DEPOSITION

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Nanostructured ZnO films: a study of molecular influence on transport properties by impedance spectroscopy

Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like glucose oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment to preserve the activity of the enzyme. In this work we study the electrical transport properties of ZnO thin films (TFs) and single crystals (SC) in contact with different solutions by using impedance spectroscopy. We have found that the composition of the liquid, by means of the charge of the ions, produces strong changes in the transport properties of the TF. The enzyme GOx and phosphate buffer solutions have the major effect in the conduction through the films, which can be explained by the entrapment of carriers at the grain boundaries of the TFs. These results can help to design a new concept in glucose biosensing.Comment: 35 pages, 2 Appendix, 22 figures, to be published in Materials Science & Engineering

High-Efficiency Second Harmonic Generation from a Single Hybrid ZnO Nanowire/Au Plasmonic Nano-Oligomer

We introduce a plasmonic-semiconductor hybrid nanosystem, consisting of a ZnO nanowire coupled to a gold pentamer oligomer by crossing the hot-spot. It is demonstrated that the hybrid system exhibits a second harmonic (SH) conversion efficiency of ∼3 × 10–5%, which is among the highest values for a nanoscale object at optical frequencies reported so far. The SH intensity was found to be ∼1700 times larger than that from the same nanowire excited outside the hot-spot. Placing high nonlinear susceptibility materials precisely in plasmonic confined-field regions to enhance SH generation opens new perspectives for highly efficient light frequency up-conversion on the nanoscale.Fil: Grinblat, Gustavo Sergio. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Electrónica Cuántica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; ArgentinaFil: Rahmani, Mohsen. Imperial College London; Reino UnidoFil: Cortés, Emiliano. Imperial College London; Reino Unido. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Caldarola, Martín. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Electrónica Cuántica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Maier, Stefan A.. Imperial College London; Reino UnidoFil: Bragas, Andrea Veronica. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Electrónica Cuántica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires; Argentin

Epitaxial pulsed laser crystallization of amorphous germanium on GaAs

We have investigated the crystallization of amorphous germanium films on GaAs crystals using nanosecond laser pulses. The structure and composition of the crystallized layers is dominated by nonequilibrium effects induced by the fast cooling process following laser irradiation. Perfect epitaxial films are obtained for fluencies that completely melt the Ge film, but not the substrate. For higher fluencies, partial melting of the substrate leads to the formation of a (GaAs)(1-x)Ge-2x epitaxial alloy with a graded composition profile at the interface with the substrate. Since Ge and GaAs are thermodynamically immiscible in the solid phase, the formation of the alloy is attributed to the suppression of phase separation during the fast cooling process. Lower laser fluencies lead to polycrystalline layers with a patterned surface structure. The latter is attributed to the freeze-in of instabilities in the melt during the fast solidification process. (C) 2001 American Institute of Physics.9052575258

Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra

Investigation into Photoconductivity in Single CNF/TiO2-Dye Core–Shell Nanowire Devices

A vertically aligned carbon nanofiber array coated with anatase TiO2 (CNF/TiO2) is an attractive possible replacement for the sintered TiO2 nanoparticle network in the original dye-sensitized solar cell (DSSC) design due to the potential for improved charge transport and reduced charge recombination. Although the reported efficiency of 1.1% in these modified DSSC’s is encouraging, the limiting factors must be identified before a higher efficiency can be obtained. This work employs a single nanowire approach to investigate the charge transport in individual CNF/TiO2 core–shell nanowires with adsorbed N719 dye molecules in dark and under illumination. The results shed light on the role of charge traps and dye adsorption on the (photo) conductivity of nanocrystalline TiO2 CNF’s as related to dye-sensitized solar cell performance